参数资料
型号: NTD4813N-1G
厂商: ON Semiconductor
文件页数: 5/8页
文件大小: 0K
描述: MOSFET N-CH 30V 7.6A IPAK
产品变化通告: Product Obsolescence 21/Jan/2010
标准包装: 75
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 7.6A
开态Rds(最大)@ Id, Vgs @ 25° C: 13 毫欧 @ 30A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 250µA
闸电荷(Qg) @ Vgs: 7.9nC @ 4.5V
输入电容 (Ciss) @ Vds: 860pF @ 12V
功率 - 最大: 1.27W
安装类型: 通孔
封装/外壳: TO-251-3 短引线,IPak,TO-251AA
供应商设备封装: I-Pak
包装: 管件
NTD4813N
TYPICAL PERFORMANCE CURVES
1000
15
900
T J = 25 ° C
13.5
800
700
600
500
C iss
12
10.5
9
7.5
Q T
400
300
200
100
0
0
5
10
C oss
C rss
15
20
25
6
4.5
3
1.5
0
0
Q 1
1 2
3
4
Q 2
5
6
7
I D = 30 A
V DD = 15 V
V GS = 11.5 V
T J = 25 ° C
8 9 10 11 12 13 14 15 16
100
V DS , DRAIN--TO--SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
30
Q G , TOTAL GATE CHARGE (nC)
Figure 8. Gate--To--Source and Drain--To--Source
Voltage vs. Total Charge
V GS = 0 V
10
t r
t d(off)
t d(on)
25
20
15
10
T J = 25 ° C
1
1
t f
10
V DD = 15 V
I D = 30 A
V GS = 11.5 V
100
5
0
0.5
0.6
0.7
0.8
0.9
1.0
R G , GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
V SD , SOURCE--TO--DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
1000
100
V GS = 20 V
SINGLE PULSE
T C = 25 ° C
10 m s
80
70
60
50
I D = 12 A
40
10
100 m s
30
1
0.1
R DS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
1 ms
10 ms
dc
100
20
10
0
25
50 75
100 125
150
175
V DS , DRAIN--TO--SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
http://onsemi.com
5
T J , JUNCTION TEMPERATURE ( ° C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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