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参数资料
| 型号： | MGFC38V3642-51 |
| 元件分类： | 功率晶体管 |
| 英文描述： | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封装： | HERMETIC SEALED, METAL CERAMIC, GF-18, 2 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 83K |
| 代理商： | MGFC38V3642-51 |
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MGFC38V5867 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |
| MGFC38V5867_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |
| MGFC38V5964 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |
| MGFC38V5964_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |
| MGFC38V5964_97 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:5.9 - 6.4GHz BAND 6W INTERNALLY MATCHED GaAs FET |
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