参数资料
型号: MIC4125YML TR
厂商: Micrel Inc
文件页数: 9/11页
文件大小: 0K
描述: IC DRIVER MOSFET 3A DUAL 8-MLF
标准包装: 1,000
配置: 低端
输入类型: 反相和非反相
延迟时间: 44ns
电流 - 峰: 3A
配置数: 2
输出数: 2
电源电压: 4.5 V ~ 20 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-VFDFN 裸露焊盘,8-MLF?
供应商设备封装: 8-MLF?(2x2)
包装: 带卷 (TR)
其它名称: MIC4125YMLTR
MIC4125YMLTR-ND
MIC4123/4124/4125
P Q = V S x [D x I H + (1 – D) x I L ]
= 12 x [(0.5 x 0.0035) + (0.5 x 0.0003)]
= 0.0228W
Total power dissipation, then, is:
P D = 0.2160 + 0.0066 + 0.0228
= 0.2454W
Assuming an E-Pad SOIC package, with an θ JA of 58°C/W,
this will result in the junction running at:
0.2454 x 58 = 14.2°C
above ambient, which, given a maximum ambient tempera-
ture of 60°C, will result in a maximum junction temperature
of 89.4°C.
EXAMPLE 2: A MIC4124 operating on a 15V input, with one
driver driving a 50Ω resistive load at 1MHz, with a duty cycle
of 67%, and the other driver quiescent, in a maximum ambi-
ent temperature of 40°C:
P L = I 2 x R O x D
First, I O must be determined.
I O = V S / (R O + R LOAD )
Given R O from the characteristic curves then,
I O = 15 / (3.3 + 50)
I O = 0.281A
and:
P L = (0.281) 2 x 3.3 x 0.67
= 0.174W
P T = F x V S x (A?s)/2
(because only one side is operating)
= (1,000,000 x 15 x 3.3 x 10 –9 ) / 2
= 0.025 W
and:
P Q = 15 x [(0.67 x 0.00125) + (0.33 x 0.000125) +
(1 x 0.000125)]
(this assumes that the unused side of the driver has its input
grounded, which is more ef?cient)
= 0.015W
then:
P D = 0.174 + 0.025 + 0.0150
= 0.213W
Micrel, Inc.
In a MLF with an θ JA of 60°C/W, this amount of power results
in a junction temperature given the maximum 40°C ambient
of:
(0.213 x 100) + 40 = 52.8°C
The actual junction temperature will be lower than calculated
both because duty cycle is less than 100% and because the
graph lists R DS(on) at a T J of 125°C and the R DS(on) at 52.8°C T J
will be somewhat lower.
De?nitions
C L = Load Capacitance in Farads.
D = Duty Cycle expressed as the fraction of time the
input to the driver is high.
f = Operating Frequency of the driver in Hertz.
I H = Power supply current drawn by a driver when both
inputs are high and neither output is loaded.
I L = Power supply current drawn by a driver when both
inputs are low and neither output is loaded.
I D = Output current from a driver in Amps.
P D = Total power dissipated in a driver in Watts.
P L = Power dissipated in the driver due to the driver ’s
load
in Watts.
P Q = Power dissipated in a quiescent driver in Watts.
P T = Power dissipated in a driver when the output
changes
states ( “shoot-through current ”) in Watts.
NOTE: The “shoot-through” current from a dual
transition (once up, once down) for both drivers is
stated in the graph on the following page in ampere-
nanoseconds. This ?gure must be multiplied by the
number of repetitions per second (frequency to ?nd
Watts).
R O = Output resistance of a driver in Ohms.
V S = Power supply voltage to the IC in Volts.
M9999-052405
9
May 2005
相关PDF资料
PDF描述
T95B156K016ESSL CAP TANT 15UF 16V 10% 1611
R7011005XXUA RECTIFIER 1000V 550A
T95V685M010LSSL CAP TANT 6.8UF 10V 20% 1410
MIC4124YML TR IC DRIVER MOSFET 3A DUAL 8-MLF
3059Y-1-223 TRIMMER 22K OHM 1W TH
相关代理商/技术参数
参数描述
MIC4126 制造商:MICREL 制造商全称:Micrel Semiconductor 功能描述:Dual 1.5A-Peak Low-Side MOSFET Drivers in Advanced Packaging
MIC4126_11 制造商:MIC 制造商全称:MIC GROUP RECTIFIERS 功能描述:Dual 1.5A-Peak Low-Side MOSFET Drivers in Advanced Packaging
MIC4126BME 功能描述:IC DRIVER MOSFET 1.5A DUAL 8SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET,电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大(自引导启动):600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP(0.300",7.62mm) 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127
MIC4126ML 制造商:RF Micro Devices Inc 功能描述:
MIC4126YME 功能描述:功率驱动器IC 1.5A Dual High Speed MOSFET Driver with Low Thermal Impedance (Pb-Free) RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube