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参数资料
| 型号： | MJD50 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 功率晶体管 |
| 英文描述： | 1 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-252 |
| 封装： | DPAK-3 |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 代理商： | MJD50 |
MJD50
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
STMicroelectronics PREFERRED
SALESTYPE
s
HIGH VOLTAGE CAPABILITY
s
SURFACE-MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
s
ELECTRICALLY SIMILAR TO TIP50
APPLICATIONS
s
SWITCH MODE POWER SUPPLIES
s
AUDIO AMPLIFIERS
s
GENERAL PURPOSE SWITCHING AND
AMPLIFIER
DESCRIPTION
The MJD50 is manufactured using Medium
Voltage Epitaxial Planar technology, resulting in a
rugged high performance cost-effective transistor.
INTERNAL SCHEMATIC DIAGRAM
January 2000
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Uni t
VCBO
Collector-Base Voltage (IE = 0)
500
V
VCEO
Collector-Emit ter Voltage (IB = 0)
400
V
VEBO
Emitt er-Base Voltage (IC =0)
5
V
IC
Collector Current
1
A
ICM
Collector Peak Current (tp <5 ms)
2
A
IB
Base Current
0.6
A
IBM
Base Peak Current (tp <5 ms)
1.2
A
Ptot
Total Dissipation at Tc =25
oC15
W
Tstg
St orage Temperature
-65 to 150
oC
Tj
Max. Operating Junction T emperature
150
oC
1
3
DPAK
TO-252
(Suffix ”T4”)
1/6
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MJD50_12 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:NPN Epitaxial Silicon Transistor |
| MJD50-1 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 WATTS |
| MJD50G | 功能描述:两极晶体管 - BJT 1A 400V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD50T4 | 功能描述:两极晶体管 - BJT NPN Hi-Volt Fast Sw RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD50T4G | 功能描述:两极晶体管 - BJT 1A 400V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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