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参数资料
| 型号： | MJD50I |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 1 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封装： | IPAK-3 |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 代理商： | MJD50I |
2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
MJD47/
50
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
C=25°C unless otherwise noted
Electrical Characteristics T
C=25°C unless otherwise noted
* Pulse Test: PW
≤300s, Duty Cycle≤2%
Symbol
Parameter
Value
Units
VCBO
Collector-Emitter Voltage
: MJD47
: MJD50
350
500
V
VCEO
Collector-Emitter Voltage
: MJD47
: MJD50
250
400
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current (DC)
1
A
ICP
Collector Current (Pulse)
2
A
IB
Base Current
0.6
A
PC
Collector Dissipation (TC=25°C)
15
W
Collector Dissipation (Ta=25°C)
1.56
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Max.
Units
VCEO(sus)
* Collector-Emitter Sustaining Voltage
: MJD47
: MJD50
IC = 30mA, IB = 0
250
400
V
ICEO
Collector Cut-off Current
: MJD47
: MJD50
VCE = 150V, IB = 0
VCE = 300V, IB = 0
0.2
mA
ICES
Collector Cut-off Current
: MJD47
: MJD50
VCE = 350, VEB = 0
VCE = 500, VEB = 0
0.1
mA
IEBO
Emitter Cut-off Current
VBE = 5V, IC = 0
1
mA
hFE
* DC Current Gain
VCE = 10V, IC = 0.3A
VCE = 10V, IC = 1A
30
10
150
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = 1A, IB = 0.2A
1
V
VBE(sat)
* Base-Emitter Saturation Voltage
VCE = 10A, IC = 1A
1.5
V
fT
Current Gain Bandwidth Product
VCE =10V, IC = 0.2A
10
MHz
MJD47/50
High Voltage and High Reliability
D-PAK for Surface Mount Applications
Load Formed for Surface Mount Application (No Suffix)
Straight Lead (I-PAK, “- I” Suffix)
Electrically Similar to Popular TIP47 and TIP50
1.Base
2.Collector
3.Emitter
D-PAK
I-PAK
11
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| MJD50 | 1 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-252 |
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| MJDS-LG5-86-2GF5S-30 | 12 CONTACT(S), FEMALE, TELECOM AND DATACOM CONNECTOR, SOLDER, JACK |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MJD50T4 | 功能描述:两极晶体管 - BJT NPN Hi-Volt Fast Sw RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD50T4G | 功能描述:两极晶体管 - BJT 1A 400V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD50T4G | 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR NPN 400V D-PAK 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR, NPN, 400V D-PAK |
| MJD50T4G-CUT TAPE | 制造商:ON 功能描述:MJD Series 400 V 1 A NPN Surface Mount Power Transistor - TO-252 |
| MJD50TF | 功能描述:两极晶体管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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