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参数资料
| 型号： | MJD50T4 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 功率晶体管 |
| 英文描述： | 1 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-252AA |
| 封装： | TO-252, DPAK-3 |
| 文件页数： | 1/6页 |
| 文件大小： | 142K |
| 代理商： | MJD50T4 |
MJD50
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
STMicroelectronics PREFERRED
SALESTYPE
s
HIGH VOLTAGE CAPABILITY
s
SURFACE-MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
s
ELECTRICALLY SIMILAR TO TIP50
APPLICATIONS
s
SWITCH MODE POWER SUPPLIES
s
AUDIO AMPLIFIERS
s
GENERAL PURPOSE SWITCHING AND
AMPLIFIER
DESCRIPTION
The MJD50 is manufactured using Medium
Voltage Epitaxial Planar technology, resulting in a
rugged high performance cost-effective transistor.
INTERNAL SCHEMATIC DIAGRAM
January 2000
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage (IE = 0)
500
V
VCEO
Collector-Emitter Voltage (IB = 0)
400
V
VEBO
Emitter-Base Voltage (IC = 0)
5
V
IC
Collector Current
1
A
ICM
Collector Peak Current (tp < 5 ms)
2
A
IB
Base Current
0.6
A
IBM
Base Peak Current (tp < 5 ms)
1.2
A
Ptot
Total Dissipation at Tc = 25
oC15
W
Tstg
Storage Temperature
-65 to 150
oC
Tj
Max. Operating Junction Temperature
150
oC
1
3
DPAK
TO-252
(Suffix "T4")
1/6
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| MJD6036 | 4 A, 80 V, NPN, Si, POWER TRANSISTOR |
| MJD6036-1 | 4 A, 80 V, NPN, Si, POWER TRANSISTOR |
| MJD6036T4 | 4 A, 80 V, NPN, Si, POWER TRANSISTOR |
| MJD6039T4 | 4 A, 80 V, NPN, Si, POWER TRANSISTOR |
| MJD6039 | 4 A, 80 V, PNP, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJD50T4G | 功能描述:两极晶体管 - BJT 1A 400V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD50T4G | 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR NPN 400V D-PAK 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR, NPN, 400V D-PAK |
| MJD50T4G-CUT TAPE | 制造商:ON 功能描述:MJD Series 400 V 1 A NPN Surface Mount Power Transistor - TO-252 |
| MJD50TF | 功能描述:两极晶体管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD5731 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:High Voltage PNP Silicon Power Transistors |
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