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| 型号： | MMBT2222AW |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 2/4页 |
| 文件大小： | 97K |
| 代理商： | MMBT2222AW |
PAGE . 2
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ELECTRICAL CHARACTERISTICS
Note 2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.
Scope rise time < 4ns
* Total shunt capacitance of test jig, connectors, and oscilloscope
SWITCHING TIME EQUIVALENT TEST CIRCUITS
200
1K
C
S* < 10pF
0
-2V
1.0 to 100us
Duty Cycle ~ 2.0%
+16V
< 2ns
+30V
C
S* < 10pF
0
-2V
1.0 to 100us
Duty Cycle ~ 2.0%
+16V
< 2ns
+30V
Fig. 1. Turn-On Time
C
S* < 10pF
200
1K
1N914
+30V
0
-14V
1.0 to 100us
Duty Cycle ~ 2.0%
+16V
< 20ns
-4V
C
S* < 10pF
1N914
+30V
0
-14V
1.0 to 100us
Duty Cycle ~ 2.0%
+16V
< 20ns
-4V
Fig. 2. Turn-Off Time
相关PDF资料 |
PDF描述 |
|---|---|
| MMBT2222A | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMBT2222A/E8 | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMBT2222A | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMBT2222A | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| MMBT2222A | 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBT2222AW_10 | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:NPN GENERAL PURPOSE SWITCHING TRANSISTOR |
| MMBT2222AWT1 | 功能描述:两极晶体管 - BJT 600mA 75V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT2222AWT1_10 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:General Purpose Transistor |
| MMBT2222AWT1G | 功能描述:两极晶体管 - BJT 600mA 75V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT2222AWT1GOSDKR-ND | 制造商: 功能描述: 制造商:undefined 功能描述: |
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