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参数资料
| 型号： | MMBZ10VALT1G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 24 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236AB |
| 封装： | LEAD FREE, PLASTIC, CASE 318, 3 PIN |
| 文件页数： | 1/7页 |
| 文件大小： | 74K |
| 代理商： | MMBZ10VALT1G |
Semiconductor Components Industries, LLC, 2007
April, 2007 Rev. 8
1
Publication Order Number:
MMBZ5V6ALT1/D
MMBZ5V6ALT1 Series
Preferred Device
24 and 40 Watt Peak Power
Zener Transient Voltage
Suppressors
SOT23 Dual Common Anode Zeners
for ESD Protection
These dual monolithic silicon Zener diodes are designed for
applications requiring transient overvoltage protection capability. They
are intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment and other applications. Their dual junction common
anode design protects two separate lines using only one package. These
devices are ideal for situations where board space is at a premium.
Features
SOT23 Package Allows Either Two Separate Unidirectional
Configurations or a Single Bidirectional Configuration
Working Peak Reverse Voltage Range 3 V to 26 V
Standard Zener Breakdown Voltage Range 5.6 V to 33 V
Peak Power 24 or 40 W @ 1.0 ms (Unidirectional),
per Figure 5 Waveform
ESD Rating:
Class 3B (>16 kV) per the Human Body Model
Class C (>400 V) per the Machine Model
Maximum Clamping Voltage @ Peak Pulse Current
Low Leakage < 5.0 mA
Flammability Rating UL 94 V0
PbFree Packages are Available
Mechanical Characteristics
CASE:
Void-free, transfer-molded, thermosetting plastic case
FINISH:
Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260
°C for 10 Seconds
Package designed for optimal automated board assembly
Small package size for high density applications
Available in 8 mm Tape and Reel
Use the Device Number to order the 7 inch/3,000 unit reel.
Replace the “T1” with “T3” in the Device Number to order the
13 inch/10,000 unit reel.
Preferred devices are recommended choices for future use
and best overall value.
SOT23
CASE 318
STYLE 12
1
3
2
1
2
3
MARKING
DIAGRAM
See specific marking information in the device marking
column of the table on page 3 of this data sheet.
DEVICE MARKING INFORMATION
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
1
xxxM
G
xxx
= Specific Device Code
M
= Date Code
G
= PbFree Package
(Note: Microdot may be in either location)
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PDF描述 |
|---|---|
| MMBZ9V1ALT3G | 24 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236 |
| MQUMA12A | 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| MQUMA130CA | 500 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| MQUMA160CA | 500 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| MQUMA22A | 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBZ12VA | 制造商:WEITRON 制造商全称:Weitron Technology 功能描述:SMALL SIGNAL ZENER DIODES 300m WATTS 3-26 VOLTS |
| MMBZ12VAL | 制造商:NXP Semiconductors 功能描述:DIODE DUAL TVS 40W 8.5V SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, 40W, 8.5V, SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, 40W, 8.5V, SOT23; Reverse Stand-Off Voltage Vrwm:8.5V; Breakdown Voltage Min:11.4V; Breakdown Voltage Max:12.6V; Clamping Voltage Vc Max:17V; Peak Pulse Current Ippm:2.35A; Diode Case Style:SOT-23; No. of Pins:3 ;RoHS Compliant: Yes |
| MMBZ12VAL,215 | 功能描述:ESD 抑制器 Diode TVS Dual/Singl 8.5V 40W 3-Pin RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C |
| MMBZ12VAL/DG | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Double ESD protection diodes for transient overvoltage suppression |
| MMBZ12VAL215 | 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
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