参数资料
型号: MMSZ5258BT/R7
元件分类: 齐纳二极管
英文描述: 36 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
封装: ROHS COMPLIANT, PLASTIC PACKAGE-2
文件页数: 1/1页
文件大小: 91K
代理商: MMSZ5258BT/R7
DC Line Filters VOL.08
bLFT
50
+15
–5
50
+15
–5
50
+15
–5
10±2.0
16 max.
12
max.
16
max.
12
max.
bHFT
16 max.
Circuit diagram
bSZ-03
12
max.
3.0
min.
0.7
7.0±0.5
7.0
±
0.5
16 max.
10±2.0
Shape and Dimensions/Circuit Diagram
Noise Filters for Telephone Sets
LFT, HFT, SZ-03
[RoHS Compliant]
Noise Filters for Telephone Sets
LFT, HFT, SZ-03
[RoHS Compliant]
LFT
0.5 to 7
27
(15 dB) (at 0.5 MHz)
50
100
10
–20 to +75
AM band
SZ-03
0.5 to 7
27
(at 0.5 MHz)
50
100
10
–20 to +75
AM band
HFT
7 to 40
2.6 (15 dB) (at 7MHz)
50
100
0.2
–20 to +75
FM band
Frequency range
Impedance or
Rated voltage Rated current
DC resistance
Operating
Model
attenuation
temperature range
Remarks
(MHz)
(k ) min.
DC (V)
(mA)
( /line) max.
(C)
0.1
1
10
100
1000
LFT SZ-03
HFT
Impedance
(k
)
Frequency (MHz)
0.1
1
10
100
500
Impedance vs. Frequency
Withstanding voltage: 500VDC (one minute, between lines)
Insulation resistance: more than 10M
(250VDC, between lines)
[mm]
Telephone set
Terminal
(facsimile, card reader, etc.)
Installed filter
ST-201
ST-201A
ST-202
ST-202A
ST-202S
SZ-03
ST-101
ST-101A
ST-101F2
ST-101F4
ST-110AH
ST-110AV
ST-110BH
ST-110BV
ST-104A4
ST-204A1
ST-204A3
ST-204A4
Rosette
Installed filter
Installation position
Telephone line
Line terminal unit
LFT
HFT
Installation Examples
Insertion in Driver/ Receive
circuit in telephone
Telephone
Drv.
Rec.
Installation at rosette or circuit input/output
ST, LFT, HFT
Circuit
L2
L1
Telephone
Design Examples
DIP Type
Common Mode for Telephone Sets
相关PDF资料
PDF描述
MMSZ5260BST/R13 43 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
MMSZ5263BRH 56 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
MMSZ4704-V-G-18 17 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
MMSZ5233C-V-G 6 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
MMSZ5237-V-G 8.2 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
相关代理商/技术参数
参数描述
MMSZ5258B-V-GS08 功能描述:稳压二极管 36 Volt 0.5 Watt 5% RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel
MMSZ5258B-V-GS18 功能描述:稳压二极管 36 Volt 0.5 Watt 5% RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel
MMSZ5258C-E3-08 制造商:Vishay Intertechnologies 功能描述:ZENER DIODE SOD123
MMSZ5258C-E3-18 制造商:Vishay Intertechnologies 功能描述:ZENER DIODE SOD123
MMSZ5258C-G3-08 制造商:Vishay Intertechnologies 功能描述:ZENER DIODE SOD123