参数资料
型号: MMT08B310T3
厂商: ON SEMICONDUCTOR
元件分类: 浪涌电流限制器
英文描述: Thyristor Surge Protectors(晶阐管浪涌电压保护器)
中文描述: 365 V, SILICON SURGE PROTECTOR, DO-214AA
封装: CASE 403C-01, SMT, SMB, 2 PIN
文件页数: 1/6页
文件大小: 58K
代理商: MMT08B310T3
Semiconductor Components Industries, LLC, 2005
August, 2005 Rev. 3
1
Publication Order Number:
MMT08B310T3/D
MMT08B310T3
Preferred Devices
Thyristor Surge Protectors
High Voltage Bidirectional TSPD
These Thyristor Surge Protective devices (TSPD) prevent
overvoltage damage to sensitive circuits by lightning, induction and
power line crossings. They are breakovertriggered crowbar
protectors. Turnoff occurs when the surge current falls below the
holding current value.
High Surge Current Capability: 80 Amps 10 x 1000
μ
sec, for
Controlled Temperature Environments
The MMT08B310 is used to help equipment meet various regulatory
requirements including: Bellcore 1089, ITU K.20 & K.21, IEC 950,
UL 1459 & 1950 and FCC Part 68.
Bidirectional Protection in a Single Device
Little Change of Voltage Limit with Transient Amplitude or Rate
Freedom from Wearout Mechanisms Present in NonSemiconductor
Devices
FailSafe, Shorts When Overstressed, Preventing Continued
Unprotected Operation
Surface Mount Technology (SMT)
Indicates UL Registered File #E210057
PbFree Package is Available
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
OffState Voltage Maximum
MMT08B310T3
V
DM
270
V
Maximum Pulse Surge Short Circuit
Current NonRepetitive
Double Exponential Decay Waveform
(Notes 1 and 2)
10 x 1000
μ
sec
(25
°
C Initial Temperature)
8 x 20
μ
sec
10 x 160
μ
sec
10 x 560
μ
sec
I
PPS1
I
PPS2
I
PPS3
I
PPS4
80
250
150
100
A(pk)
Maximum NonRepetitive Rate of
Change of OnState Current
Double Exponential Waveform,
R = 1.0, L = 1.5
μ
H, C = 1.67
μ
F,
I
pk
= 110A
di/dt
150
A/
μ
s
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Allow cooling before testing second polarity.
2. Measured under pulse conditions to reduce heating.
BIDIRECTIONAL TSPD
80 AMP SURGE
310 VOLTS
Preferred
devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
MMT08B310T3
SMB
2500 Tape & Reel
MT1
MT2
SMB
(No Polarity)
(Essentially JEDEC DO214AA)
CASE 403C
(
)
RPCJ
A
Y
WW
= Specific Device Code
= Assembly Location
= Year
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
AYWW
RPCJ
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMT08B310T3G
SMB
PbFree
2500 Tape & Reel
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相关代理商/技术参数
参数描述
MMT08B310T3_05 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Thyristor Surge Protectors High Voltage Bidirectional TSPD
MMT08B310T3G 功能描述:硅对称二端开关元件 80A Surge 310V RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流(在 VDRM IDRM 下): 保持电流(Ih 最大值):50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA
MMT08B350T3 功能描述:硅对称二端开关元件 80A Surge 350V RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流(在 VDRM IDRM 下): 保持电流(Ih 最大值):50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA
MMT08B350T3G 功能描述:硅对称二端开关元件 80A Surge 350V RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流(在 VDRM IDRM 下): 保持电流(Ih 最大值):50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA
MMT100J224 制造商:Nissei Electronics 功能描述: