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参数资料
| 型号： | MR3227N |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封装： | CASE 193A-02, 2 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 46K |
| 代理商： | MR3227N |
MR3227
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance Junction to Case
RθJC
0.5
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Max
Unit
Instantaneous Forward Voltage (Note 1.) (IF = 100 Amps, TC = 25°C)
vF
–
1.18
Volts
Reverse Current (Note 1.) (VR = 16 Vdc, TC = 25°C)
IR
–
1.0
mA
Breakdown Voltage (Note 1.) (IR = 100 mA, TC = 25°C)
V(BR)
20
27
Volts
Breakdown Voltage
(IR = 80 Amps, TC = 25°C, PW = 80 ms)
(IR = 80 Amps, TC = 85°C, PW = 80 ms)
V(BR)
–
35
37
Volts
Breakdown Voltage Temperature Coefficient
V(BR)TC
0.095*
%/
°C
Forward Voltage Temperature Coefficient (IF = 10 mA)
VFTC
–2*
mV/
°C
1. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2%.
*Typical
Figure 1. Typical Reverse Current
Figure 2. Typical Forward Voltage
Figure 3. Maximum Peak Reverse Current
Figure 4. Maximum Peak Reverse Power
VR, REVERSE VOLTAGE (V)
I
20
15
10
5
0
0.001
0.1
1
10
100
1000
,REVERSE
CURRENT
(
A)
R
TJ = 200°C
m
0.01
150
°C
100
°C
25
°C
100
°C
VF, INSTANTANEOUS FORWARD VOLTAGE (mV)
I
1000
900
800
700
500
1
10
100
1000
F
,INST
ANT
ANEOUS
FOR
W
ARD
CURRENT
(A)
TJ = 200°C
25
°C
600
150
°C
t, TIME CONSTANT (mS)
I
1000
100
10
1
10
1000
P
1000
100
10
1
100
1000
10000
RSM
,PEAK
REVERSE
CURRENT
(A)
,PEAK
REVERSE
POWER
(W)
RSM
TC = 25°C
100
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