- 您现在的位置：买卖IC网 > PDF目录96049 > MRF134 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF资料下载
参数资料
| 型号： | MRF134 |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | CASE 211-07, 4 PIN |
| 文件页数： | 5/10页 |
| 文件大小： | 208K |
| 代理商： | MRF134 |
Figure 8. Output Power versus Gate Voltage
Figure 9. Drain Current versus Gate Voltage
(Transfer Characteristics)
Figure 10. Gate–Source Voltage versus
Case Temperature
Figure 11. Maximum Available Gain
versus Frequency
Figure 12. Capacitance versus Voltage
Figure 13. Maximum Rated Forward Biased
Safe Operating Area
6
5
4
3
2
0
-2
0
VGS, GATE-SOURCE VOLTAGE (VOLTS)
P
,OUTPUT
POWER
(W
ATTS)
out
1
-1
12
3
4
5
I D
,DRAIN
CURRENT
(MILLAMPS)
500
0
VGS, GATE-SOURCE VOLTAGE (VOLTS)
12
3
4
5
400
300
200
100
67
8
1.02
-25
TC, CASE TEMPERATURE (°C)
0
25
50
75
100
125
150
1
0.98
0.96
0.94
0.92
0.9
V GS
,GA
TESOURCE
VOL
TAGE
(NORMALIZED)
G
MAX
,MAXIMUM
AV
AILABLE
GAIN
(dB)
C,
CAP
ACIT
ANCE
(pF)
I D
,DRAIN
CURRENT
(AMPS)
50
f, FREQUENCY (MHz)
1
10
100
1000
40
30
20
10
0
VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
0
28
24
20
16
12
8
4
0
4
8
12
16
20
24
28
VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
1
2
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
5
10
20
50 70 100
VDD = 28 V
IDQ = 50 mA
Pin = CONSTANT
f = 400 MHz
150 MHz
TYPICAL DEVICE SHOWN,
VGS(th) = 3.5 V
VDS = 10 V
TYPICAL DEVICE SHOWN,
VGS(th) = 3.5 V
VDD = 28 V
IDQ = 200 mA
100 mA
50 mA
GMAX =
|S21|2
(1 - |S11|2) (1 - |S22|2)
VDS = 28 V
ID = 100 mAdc
VGS = 0 V
f = 1 MHz
Coss
Ciss
Crss
TC = 25°C
0
4
REV 6
相关PDF资料 |
PDF描述 |
|---|---|
| MRF141G | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF141 | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF148A | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF1500 | L BAND, Si, NPN, RF POWER TRANSISTOR |
| MRF15030 | L BAND, Si, NPN, RF POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF134-39 | 制造商:ASI 制造商全称:ASI 功能描述:VHF POWER MOSFET |
| MRF136 | 功能描述:射频MOSFET电源晶体管 5-400MHz 15Watts 28Volt Gain 16dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF136MP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET 制造商:M/A-COM Technology Solutions 功能描述:MRF136MP |
| MRF136Y | 制造商:M/A-COM Technology Solutions 功能描述:TRANS MOSFET N-CH 65V 5A 2PIN CASE 319B-02 - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET 制造商:M/A-COM Technology Solutions 功能描述:Trans RF MOSFET N-CH 65V 5A 5-Pin Case 319B-02 |
| MRF137 | 功能描述:射频MOSFET电源晶体管 5-400MHz 30Watts 28Volt Gain 13dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
发布紧急采购，3分钟左右您将得到回复。