型号: | MTD6N10-1 |
厂商: | MOTOROLA INC |
元件分类: | JFETs |
英文描述: | 6 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
文件页数: | 1/1页 |
文件大小: | 42K |
代理商: | MTD6N10-1 |
相关PDF资料 |
PDF描述 |
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MTP10N10M | 10 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
MTD2N20T4 | 2 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
MTD4P06-1 | 4 A, 60 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251 |
MTD1N40-1 | 1 A, 400 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
MTD1N40T4 | 1 A, 400 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
相关代理商/技术参数 |
参数描述 |
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MTD6N10E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM |
MTD6N10E1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
MTD6N15 | 制造商:Rochester Electronics LLC 功能描述: |
MTD6N15-1 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power Field Effect Transistor DPAK for Surface Mount |
MTD6N15T4 | 功能描述:MOSFET 150V 6A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |