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参数资料
| 型号： | MURB2020CTTRRPBF |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, 200 V, SILICON, RECTIFIER DIODE |
| 封装： | ROHS COMPLIANT, D2PAK-3 |
| 文件页数： | 5/7页 |
| 文件大小： | 107K |
| 代理商： | MURB2020CTTRRPBF |
Document Number: 93915
For technical questions, contact: diodestech@vishay.com
www.vishay.com
Revision: 28-Jul-08
5
MURB2020CT, MURB2020CT-1
Ultrafast Rectifier,
2 x 10 A FRED Pt
Vishay High Power Products
Fig. 9 - Reverse Recovery Parameter Test Circuit
Fig. 10 - Reverse Recovery Waveform and Definitions
IRFP250
D.U.T.
L = 70 H
V
R = 200 V
0.01
Ω
G
D
S
dI
F/dt
adjust
Q
rr
0.5 I
RRM
dI
(rec)M/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
dI
F/dt
0
(1)
(2)
(3)
(4)
(5)
(1) dI
F/dt - rate of change of current
through zero crossing
(2) I
RRM - peak reverse recovery current
(3) t
rr - reverse recovery time measured
from zero crossing point of negative
going I
F to point where a line passing
through 0.75 I
RRM and 0.50 IRRM
extrapolated to zero current.
(4) Q
rr - area under curve defined by trr
and I
RRM
t
rr x IRRM
2
Q
rr =
(5) dI
(rec)M/dt - peak rate of change of
current during t
b portion of trr
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