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参数资料
| 型号： | MURB820TRRPBF |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 8 A, 200 V, SILICON, RECTIFIER DIODE |
| 封装： | ROHS COMPLIANT, D2PAK-3 |
| 文件页数： | 4/7页 |
| 文件大小： | 94K |
| 代理商： | MURB820TRRPBF |
www.vishay.com
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93123
4
Revision: 24-Jun-08
MURB820/MURB820-1
Vishay High Power Products
Ultrafast Rectifier,
8 A FRED PtTM
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
03
Allo
wab
le
Case
T
e
mperature
(°C)
IF(AV) - Average Forward Current (A)
160
170
180
See note (1)
150
DC
140
130
69
Square wave (D = 0.50)
Rated V
R applied
12
06
A
v
era
g
e
P
o
wer
Loss
(W)
IF(AV) - Average Forward Current (A)
0
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
39
2
4
10
6
8
RMS limit
12
100
1000
t rr
(ns)
dIF/dt (A/s)
20
40
V
R = 160 V
T
J = 125 °C
T
J = 25 °C
30
50
10
I
F = 16 A
I
F = 8 A
I
F = 4 A
100
1000
Q
rr
(nC)
dIF/dt (A/s)
40
I
F = 16 A
I
F = 8 A
I
F = 4 A
200
120
V
R = 160 V
T
J = 125 °C
T
J = 25 °C
80
160
0
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