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参数资料
| 型号： | MX1N6077US |
| 厂商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 1.3 A, SILICON, RECTIFIER DIODE |
| 封装： | HERMETIC SEALED, GLASS, D-5B, MELF-2 |
| 文件页数： | 1/3页 |
| 文件大小： | 135K |
| 代理商： | MX1N6077US |
VOIDLESS HERMETICALLY SEALED
SURFACE MOUNT ULTRA FAST
RECOVERY GLASS POWER
RECTIFIERS
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N6073US thru 1N6081US
1N6073US
─
1N6081US
DESCRIPTION
APPEARANCE
This “Ultrafast Recovery” rectifier diode series is ideal for high-reliability
applications where a failure cannot be tolerated. These 3, 6, and 12 Amp rated
rectifiers (TEC =70C) in different package sizes with working peak reverse
voltages from 50 to 150 volts are hermetically sealed using voidless-glass
construction and an internal “Category I” metallurgical bond. These devices
are also available in axial-lead package configurations for through-hole
mounting by deleting the “US” suffix (see separate data sheet for 1N6073 thru
1N6081).
Microsemi also offers numerous other rectifier products to meet
higher and lower current ratings with various recovery time speed requirements
including standard, fast and ultrafast device types in both through-hole and
surface mount packages.
Package “A”
(or “D-5A”)
Package “E”
(or “D-5B”)
Package “G”
(or “D-5C”)
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
Popular 1N6073US to 1N6081US series
Voidless hermetically-sealed glass package
Extremely robust construction
Triple-layer passivation
Internal “Category I” Metallurgical bonds
Options for screening in accordance with MIL-PRF-
19500/503 for JAN, JANTX, JANTXV, or JANS by
using a MQ, MX, MV or SP prefix respectively , e.g.
MX6076, MV6079, SP6081, etc.
Axial-leaded equivalents also available (see separate
data sheet for 1N6073 thru 1N6081)
Ultrafast recovery rectifier series 50 to 150 V
Military and other high-reliability applications
Switching power supplies or other applications
requiring extremely fast switching & low forward
loss
High forward surge current capability
Low thermal resistance for higher power
Controlled avalanche with peak reverse power
capability
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
Junction Temperature: -65oC to +155oC
Storage Temperature: -65oC to +155oC
Peak Forward Surge Current @ 25oC: 35 Amps for
1N6073US-6075US, 75 Amps for 1N6076US-6078US,
and 175 Amps for 1N6079US-6081US at 8.3 ms half-
sine wave
Average Rectified Forward Current (I
O) at TEC= +70
oC:
1N6073US thru 1N6075US: 3.0 Amps
1N6076US thru 1N6078US: 6.0 Amps
1N6079US thru 1N6081US: 12.0 Amps
Average Rectified Forward Current (IO) at TA=55
oC:
1N6073US thru 1N6075US: 0.85 Amps
1N6076US thru 1N6078US: 1.3 Amps
1N6079US thru 1N6081US: 2.0 Amps
Thermal Resistance (RθJEC): 13oC/W for 1N6073US-
6075US, 8.5
oC/W for 1N6076US-6078US, and
5.0
oC/W for 1N6079US-6081US
Solder temperature: 260oC for 10 s (maximum)
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
TERMINATIONS: End caps are Copper with
Tin/Lead (Sn/Pb) finish. Note: Previous inventory
had solid Silver end caps with Tin/Lead finish.
MARKING: None
POLARITY: Cathode indicated by band
Tape & Reel option: Standard per EIA-481-B
Weight: 1N6073 thru 1N6075: 193 mg
1N6076 thru 1N6078: 539 mg
1N6079 thru 1N6081: 1100 mg
See package dimensions and recommended pad
layouts on last page for all three package sizes
Microsemi
Scottsdale Division
Page 1
Copyright
2007
10-03-2007 REV D
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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