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参数资料
| 型号： | NCN6004AFTBR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 18/40页 |
| 文件大小： | 0K |
| 描述： | IC INTERFACE SAM/SIM DUAL 48TQFP |
| 标准包装： | 1 |
| 应用： | PC，PDA |
| 接口： | 微控制器 |
| 电源电压： | 1.8 V ~ 5.5 V |
| 封装/外壳： | 48-TQFP 裸露焊盘 |
| 供应商设备封装： | 48-TQFP（7x7） |
| 包装： | 标准包装 |
| 安装类型： | 表面贴装 |
| 其它名称： | NCN6004AFTBR2GOSDKR |
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NCN6004A
http://onsemi.com
25
Figure 17. Typical CRD_VCC Ripple Voltage
NOTE:
Operating conditions under full output load.
Figure 18. Typical Card Voltage Turn ON and Startup
Sequence
Figure 19. Typical Card Supply Turn OFF
58
60
62
64
66
68
70
72
74
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Figure 20. CRD_VCC Efficiency as a Function of the
Input Supply Voltage
Vbat (V)
Eff
(%)
Vout = 1.8 V
Vout = 5.0 V
Vout = 3.0 V
Lout = 22 mH
ESR = 2
W
The curves in Figure 20, illustrate the typical behavior
under full output current load (35 mA, 60 mA and 65 mA),
according to EMV specifications.
During the operation, the inductor is subject to high peak
current as depicted in Figure 21 and the magnetic core must
sustain this level of current without damage. In particular,
the ferrite material shall not be saturated to avoid
uncontrolled current spike during the charge up cycle.
Moreover, since the DC/DC efficiency depends upon the
losses developed into the active and passive components,
selecting a low ESR inductor is preferred to reduce these
losses to a minimum.
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相关代理商/技术参数 |
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|---|---|
| NCN6010 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:SIM Card Supply and Level Shifter |
| NCN6010/D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:SIM Card Supply and Level Shifter |
| NCN6010_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:SIM Card Supply and Level Shifter |
| NCN6010D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:SIM Card Supply and Level Shifter |
| NCN6010DTB | 功能描述:转换 - 电压电平 2.7V Sim Card RoHS:否 制造商:Micrel 类型:CML/LVDS/LVPECL to LVCMOS/LVTTL 传播延迟时间:1.9 ns 电源电流:14 mA 电源电压-最大:3.6 V 电源电压-最小:3 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:MLF-8 |
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