参数资料
型号: NCN6004AFTBR2G
厂商: ON Semiconductor
文件页数: 19/40页
文件大小: 0K
描述: IC INTERFACE SAM/SIM DUAL 48TQFP
标准包装: 1
应用: PC,PDA
接口: 微控制器
电源电压: 1.8 V ~ 5.5 V
封装/外壳: 48-TQFP 裸露焊盘
供应商设备封装: 48-TQFP(7x7)
包装: 标准包装
安装类型: 表面贴装
其它名称: NCN6004AFTBR2GOSDKR
NCN6004A
http://onsemi.com
26
Figure 21. Typical Output Voltage Ripple
Test conditions: Input VCC voltage = 5.0 V, Current = 200 mA /div,
Tamb = +20°C
According to the ISO78163 and EMV specifications, the
interface shall limits the CRD_VCC output current to
200 mA maximum, under short circuit conditions. The
NCN6004A supports such a parameter, the limit being
depending upon the input and output voltages as depicted
in Figure 22.
Figure 22. Output Current Limit
Figure 23. Output Current Limit as a Function
of the Temperature
180
160
140
120
100
80
60
40
20
0
6
5
4
3
2
Vbat (V)
I out
(mA)
Vo = 5.0 V
Vo = 3.0 V
Vo = 1.8 V
100
5.0
25
TEMPERATURE (
°C)
15
35
55
75
95
115
160
150
140
130
120
110
I out
(mA)
Vo = 5.0 V
Vo = 3.0 V
Vo = 1.8 V
IO(max) = F(Vbat)
Beside the continuous current capability, the smart card
power supply must be capable of providing a 100 mA pulsed
current during the data transaction. The ISO78163,
paragraph 4.3.2, defines this 400 ns pulse as a function of the
environment. As a matter of fact, this pulse does not come
solely from the NCN6004A DC/DC converter, but the
reservoir capacitor and the associated PCB tracks shall be
considered as well.
相关PDF资料
PDF描述
NCN6804MNR2G IC SMART CARD DUAL W/SPI 32-QFN
NCN7200MTTWG IC MUX/DEMUX OCTAL 1X2 42WQFN
NCN8024DTBR2G SMART CARD IC 5V/3V TSSOP
NCN8024RDWR2G IC SMART CARD IC2 28SOIC
NCN8025MTTBG IC SMART CARD I2C 16-QFN
相关代理商/技术参数
参数描述
NCN6010 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:SIM Card Supply and Level Shifter
NCN6010/D 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:SIM Card Supply and Level Shifter
NCN6010_06 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:SIM Card Supply and Level Shifter
NCN6010D 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:SIM Card Supply and Level Shifter
NCN6010DTB 功能描述:转换 - 电压电平 2.7V Sim Card RoHS:否 制造商:Micrel 类型:CML/LVDS/LVPECL to LVCMOS/LVTTL 传播延迟时间:1.9 ns 电源电流:14 mA 电源电压-最大:3.6 V 电源电压-最小:3 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:MLF-8