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参数资料
| 型号： | NT5DS32M8AW-7K |
| 厂商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 256Mb Double Data Rate SDRAM |
| 中文描述： | 256MB双数据速率SDRAM |
| 文件页数： | 1/78页 |
| 文件大小： | 1534K |
| 代理商： | NT5DS32M8AW-7K |
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NT5DS64M4AT NT5DS64M4AW
NT5DS32M8AT NT5DS32M8AW
256Mb Double Data Rate SDRAM
REV 1.1
12/2001
1
NANYA TECHNOLOGY CORP
. All rights reserved.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Features
Double data rate architecture: two data transfers per
clock cycle
Bidirectional data strobe (DQS) is transmitted and
received with data, to be used in capturing data at the
receiver
DQS is edge-aligned with data for reads and is center-
aligned with data for writes
Differential clock inputs (CK and CK)
Four internal banks for concurrent operation
Data mask (DM) for write data
DLL aligns DQ and DQS transitions with CK transitions
Commands entered on each positive CK edge; data and
data mask referenced to both edges of DQS
Burst lengths: 2, 4, or 8
CAS Latency: 2, 2.5
Auto Precharge option for each burst access
Auto Refresh and Self Refresh Modes
7.8
μ
s Maximum Average Periodic Refresh Interval
2.5V (SSTL_2 compatible) I/O
V
DDQ
= 2.5V
±
0.2V
V
DD
= 2.5V
±
0.2V
-7K parts support PC2100 modules.
-75B parts support PC2100 modules
-8B parts support PC1600 modules
Description
The 256Mb DDR SDRAM is a high-speed CMOS, dynamic
random-access memory containing 268,435,456 bits. It is
internally configured as a quad-bank DRAM.
The 256Mb DDR SDRAM uses a double-data-rate architec-
ture to achieve high-speed operation. The double data rate
architecture is essentially a
2n
prefetch architecture with an
interface designed to transfer two data words per clock cycle
at the I/O pins. A single read or write access for the 256Mb
DDR SDRAM effectively consists of a single
2n
-bit wide, one
clock cycle data transfer at the internal DRAM core and two
corresponding n-bit wide, one-half-clock-cycle data transfers
at the I/O pins.
A bidirectional data strobe (DQS) is transmitted externally,
along with data, for use in data capture at the receiver. DQS
is a strobe transmitted by the DDR SDRAM during Reads
and by the memory controller during Writes. DQS is edge-
aligned with data for Reads and center-aligned with data for
Writes.
The 256Mb DDR SDRAM operates from a differential clock
(CK and CK; the crossing of CK going high and CK going
LOW is referred to as the positive edge of CK). Commands
(address and control signals) are registered at every positive
edge of CK. Input data is registered on both edges of DQS,
and output data is referenced to both edges of DQS, as well
as to both edges of CK.
Read and write accesses to the DDR SDRAM are burst ori-
ented; accesses start at a selected location and continue for
a programmed number of locations in a programmed
sequence. Accesses begin with the registration of an Active
command, which is then followed by a Read or Write com-
mand. The address bits registered coincident with the Active
command are used to select the bank and row to be
accessed. The address bits registered coincident with the
Read or Write command are used to select the bank and the
starting column location for the burst access.
The DDR SDRAM provides for programmable Read or Write
burst lengths of 2, 4 or 8 locations. An Auto Precharge func-
tion may be enabled to provide a self-timed row precharge
that is initiated at the end of the burst access.
As with standard SDRAMs, the pipelined, multibank architec-
ture of DDR SDRAMs allows for concurrent operation,
thereby providing high effective bandwidth by hiding row pre-
charge and activation time.
An auto refresh mode is provided along with a power-saving
power-down mode. All inputs are compatible with the JEDEC
Standard for SSTL_2. All outputs are SSTL_2, Class II com-
patible.
The functionality described and the timing specifications
included in this data sheet are for the DLL Enabled mode
of operation.
CAS Latency and Frequency
CAS Latency
Maximum Operating Frequency (MHz)*
DDR266A
(-7K)
(-75B)
133
100
143
133
* Values are nominal (exact tCK should be used).
DDR266B
DDR200
(-8B)
100
125
2
2.5
相关PDF资料 |
PDF描述 |
|---|---|
| NT5DS32M8AW-8B | 256Mb Double Data Rate SDRAM |
| NT5DS64M4AW-75B | 256Mb Double Data Rate SDRAM |
| NT5DS64M4AW-7K | 256Mb Double Data Rate SDRAM |
| NT5DS64M4AW-8B | 256Mb Double Data Rate SDRAM |
| NT5DS32M8AW | 256Mb DDR333/300 SDRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NT5DS32M8AW-8B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:256Mb Double Data Rate SDRAM |
| NT5DS32M8CS | 制造商:NANOAMP 制造商全称:NANOAMP 功能描述:256Mb DDR Synchronous DRAM |
| NT5DS32M8CS-5T | 制造商:NANOAMP 制造商全称:NANOAMP 功能描述:256Mb DDR Synchronous DRAM |
| NT5DS32M8CS-6K | 制造商:NANOAMP 制造商全称:NANOAMP 功能描述:256Mb DDR Synchronous DRAM |
| NT5DS32M8CT | 制造商:NANOAMP 制造商全称:NANOAMP 功能描述:256Mb DDR Synchronous DRAM |
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