参数资料
型号: P4C147-20CMB
厂商: PYRAMID SEMICONDUCTOR CORP
元件分类: DRAM
英文描述: ULTRA HIGH SPEED 4K x 1 STATIC CMOS RAM
中文描述: 4K X 1 STANDARD SRAM, 20 ns, CDIP18
封装: 0.300 INCH, SIDE BRAZED, CERAMIC, DIP-18
文件页数: 5/10页
文件大小: 200K
代理商: P4C147-20CMB
P4C147
Page 5 of 10
Document #
SRAM103
REV A
Input Pulse Levels
GND to 3.0V
Input Rise and Fall Times
3ns
Input Timing Reference Level
1.5V
Output Timing Reference Level
1.5V
Output Load
See Figures 1 and 2
Mode
CE
WE
Output
Power
Standby
H
X
High Z
Standby
Read
L
H
D
OUT
High Z
Active
Write
L
L
Active
TRUTH TABLE
AC TEST CONDITIONS
Figure 1. Output Load
Figure 2. Thevenin Equivalent
* including scope and test fixture.
Note:
Due to the ultra-high speed of the P4C147, care must be taken when
testing this device; an inadequate setup can cause a normal functioning
part to be rejected as faulty. Long high-inductance leads that cause
supply bounce must be avoided by bringing the V
and ground planes
directly up to the contactor fingers. A 0.01 μF high frequency capacitor
is also required between V
and ground. To avoid signal reflections,
proper termination must be used; for example, a 50
test environment
should be terminated into a 50
load with 1.73V (Thevenin Voltage) at
the comparator input, and a 116
resistor must be used in series with
D
OUT
to match 166
(Thevenin Resistance).
相关PDF资料
PDF描述
P4C147-20LSC ULTRA HIGH SPEED 4K x 1 STATIC CMOS RAM
P4C147-20LSM ULTRA HIGH SPEED 4K x 1 STATIC CMOS RAM
P4C147-20LSMB ULTRA HIGH SPEED 4K x 1 STATIC CMOS RAM
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