参数资料
型号: P4KE180CA-G
厂商: Comchip Technology
文件页数: 1/6页
文件大小: 0K
描述: TVS 400W 180V 5% BIDIR DO-41
标准包装: 5,000
电压 - 反向隔离(标准值): 154V
电压 - 击穿: 171V
功率(瓦特): 400W
电极标记: 双向
安装类型: 通孔
封装/外壳: DO-204AL,DO-41,轴向
供应商设备封装: DO-41
包装: *
400W Transient Voltage Suppressor
COMCHIP
SMD Diodes Specialist
P4KE-G Series
Stand-off Voltage: 6.8 ~ 600V
Power Dissipation: 400 Watts
RoHS Device
Features
-Glass passivated chip
DO-41
-Low leakage
-Uni and Bidirection unit
-Excellent clamping capability
-The plastic material has UL recognition 94V-0
-Fast response time: typically less than 1.0pS from
0 volts to BV min
1.000(25.40)
MIN.
0.205(5.21)
0.165(4.19)
0.033(0.84)
0.028(0.71)
DIA.
Mechanical Data
-Case: Molded plastic DO-41
-Polarity: By cathode band denotes unidirectional
device none cathode band denoted bi-directional
1.000(25.40)
MIN.
0.117(2.97)
0.090(2.29)
DIA.
Rating at 25 C ambient unless otherwise specified.
device
-Weight: 0.34 gram
Maximum Ratings and Electrical Characteristics
O
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeter)
Power dissipation on infinite heatsink at T L =75 C
Parameter
Peak power dissipation a 10/1000 μ s waveform
(Note 1)
Peak pulse current with a 10/1000 μ s waveform
(Note 1)
O
Peak forward surge current, 8.3mS single
half sine-wave unidirectional only(Note 2)
Maximum instantaneous forward voltage
at 25A for unidirectional only (Note 3)
Symbol
P PP
I PP
PD
I FSM
V F
Value
400
See Next Table
1.0
40
3.5/5.0
Unit
W
A
W
A
V
Operating junction and storage temperature
range
T J , T STG
-55 to +150
O
C
NTOES:
(1) Non-repetitive current pulse, per fig.5 and derated above TA=25 O C per fig. 1.
(2) Measured on 8.3 ms single half sine-wave or equivalent square wave,duty cycle=4 pulses per minute maximum.
(3) V F <3.5V for devices of V BR <200V and V F <5.0V for devices of V BR >201V.
REV:B
QW-BTV05
Page 1
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