参数资料
型号: PMEG3010EJ,115
厂商: NXP Semiconductors
文件页数: 6/11页
文件大小: 76K
描述: SCHOTTKY RECT 30V 1A SOD323F
产品目录绘图: SOD-323 Circuit
标准包装: 3,000
二极管类型: 肖特基
电压 - (Vr)(最大): 30V
电流 - 平均整流 (Io): 1A(DC)
电压 - 在 If 时为正向 (Vf)(最大): 560mV @ 1A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 150µA @ 30V
电容@ Vr, F: 70pF @ 1V,1MHz
安装类型: 表面贴装
封装/外壳: SC-90,SOD-323F
供应商设备封装: SOD-323F
包装: 带卷 (TR)
其它名称: PMEG3010EJ115-CHP
PMEG3010EH_EJ_ET_4
? NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 04 — 20 March 2007 4 of 11
NXP Semiconductors
PMEG3010EH/EJ/ET
1 A very low VF
MEGA Schottky barrier recti?ers
6. Thermal characteristics
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR
are a signi?cant part of the total power losses.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[4] Soldering point of cathode tab.
7. Characteristics
[1] Pulse test: tp
300
μs;
δ≤0.02.
Table 7. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance from
junction to ambient
in free air
[1]
PMEG3010EH
[2]
- - 330 K/W
[3]
- - 150 K/W
PMEG3010EJ
[2]
- - 350 K/W
[3]
- - 150 K/W
PMEG3010ET
[2]
- - 440 K/W
[3]
- - 300 K/W
Rth(j-sp)
thermal resistance from
junction to solder point
[4]
PMEG3010EH - - 60 K/W
PMEG3010EJ - - 55 K/W
PMEG3010ET - - 120 K/W
Table 8. Characteristics
Tamb
=25°C unless otherwise speci?ed.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VF
forward voltage
[1]
IF= 0.1 mA - 90 130 mV
IF= 1 mA - 150 200 mV
IF= 10 mA - 215 250 mV
IF= 100 mA - 285 340 mV
IF= 500 mA - 380 430 mV
IF= 1000 mA - 450 560 mV
IR
reverse current VR=10V - 12 30
μA
VR= 30 V - 40 150μA
Cd
diode capacitance VR=1V;
f=1MHz
- 5570pF
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