集成电路TPIC1339DBTRG4

? Low rDS(on)

. . . 0.23 Ω Typ

? High Voltage Output . . . 60  V

? Extended ESD Capability . . . 4000 V

? Pulsed Current . . . 11.25 A Per Channel

? Fast Commutation Speed

     

description

The TPIC1301 is a monolithic gate-protected

power DMOS array that consists of six electrically

isolated N-channel enhancement-mode DMOS

transistors configured as three half H-bridges.

Each transistor features integrated high-current

zener diodes (ZCXa and ZCXb) to prevent gate

damage in the event that an overstress condition

occurs. These zener diodes also provide up to 4000 V of ESD protection when tested using the human-body

model of a 100-pF capacitor in series with a 1.5-kΩ resistor.

The TPIC1301 is offered in a 24-pin wide-body surface-mount (DW) package and is characterized for operation

over the case temperature range of ?40°C to 125°C.

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