产品概述
The IRFR5305PBF is a P-channel HEXFET? Power MOSFET with extremely low on-resistance per silICon area and fast switching performance. Fifth generation HEXFETs from International rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET? power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Dynamic dv/dt rating
Fully avalanche rated
Surface mount
Advanced process technology
±20V Gate-source voltage
应用
产品信息
晶体管极性: P沟道 电流, Id 连续: 31A 漏源电压, Vds: -55V 在电阻RDS(上): 0.065ohm 电压 @ Rds测量: -10V 阈值电压 Vgs: -4V 功耗 Pd: 110W 晶体管封装类型: TO-252 针脚数: 3引脚 工作温度最高值: 175°C 产品范围: - 汽车质量标准: - MSL: MSL 1 -无限制