产品概述
The IRS21850SPBF is a high voltage high speed power MOSFET and IGBT single High-side Gate Driver IC with propagation delay matched output channels. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. The floating logic input is compatible with standard CMOS or LSTTL output and down to 3.3V logic and can be operated up to 600V above the ground. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration, which operates up to 600V.
Under-voltage lockout for VBS and VCC
Tolerant to negative transient voltage
Matched propagation delays for all channels
3.3 and 5V Input logic compatible
应用
工业
产品信息
驱动配置: 高压侧 输出电流峰值: 4A 电源电压最小值: 10V 电源电压最大值: 20V 驱动器封装类型: SOIC 针脚数: 8引脚 输入延迟: 160ns 输出延迟: 160ns 工作温度最小值: -40°C 工作温度最高值: 125°C 产品范围: - 汽车质量标准: - MSL: MSL 2 - 1年