东芝SSM6N15AFE 原装进口

  • 品牌:

    TOSHIBA

  • 型号:

    SSM6N15AFE

  • 封装:

    SOT-563

  • 类型:

    结型场效应管

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产品信息

封装类型

Package ImageES6
Toshiba Package NameES6
JEITASC-107C
Package CodeSOT-563
Pins6
MountingSurface Mount
Width×Length×Height
(mm)
1.6×1.6×0.55

Absolute Maximum Ratings

CharacteristicsSymbolRatingUnit
Drain current (Q1)ID0.1A
Drain current (Q2)ID0.1A
Power DissipationPD0.15W
Drain-Source voltage (Q1)VDSS30V
Drain-Source voltage (Q2)VDSS30V
Gate-Source voltage (Q1)VGSS±20V
Gate-Source voltage (Q2)VGSS±20V

产品特性

项目符号条件数值单位
Input capacitance (Q1) (Typ.)Ciss-13.5pF
Input capacitance (Q2) (Typ.)Ciss-13.5pF
Drain-Source on-resistance (Q1) (Max)RDS(ON)VGS=2.5V6.0Ω
Drain-Source on-resistance (Q1) (Max)RDS(ON)VGS=4V3.6Ω
Drain-Source on-resistance (Q1) (Typ.)RDS(ON)VGS=2.5V3.5Ω
Drain-Source on-resistance (Q1) (Typ.)RDS(ON)VGS=4V2.3Ω
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=2.5V6.0Ω
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=4V3.6Ω
Drain-Source on-resistance (Q2) (Typ.)RDS(ON)VGS=2.5V3.5Ω
Drain-Source on-resistance (Q2) (Typ.)RDS(ON)VGS=4V2.3Ω
Gate threshold voltage (Q1) (Max)Vth-1.5V
Gate threshold voltage (Q1) (Min)Vth-0.8V
Gate threshold voltage (Q2) (Max)Vth-1.5V
Gate threshold voltage (Q2) (Min)Vth-0.8V
 
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