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参数资料
| 型号： | SI-7600D |
| 元件分类： | 开关 |
| 英文描述： | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
| 文件页数： | 4/7页 |
| 文件大小： | 525K |
| 代理商： | SI-7600D |
APEM
www.apem.com
A-81
12000X778 series
High performance toggle switches - threaded bushing 11,9 (15/32)
Fully sealed - matt black
A
Solder lug terminals - four pole
Solder lug terminals - three pole
Solder lug terminals - double pole
MODEL
STRUCTURE
Function 6
Other functions
I
II
III
12146 X778
ON
-
ON
12149 X778
ON
OFF
ON
12147 X778
MOM OFF MOM
12148 X778
ON
OFF MOM
12144 X778
ON
12144-1R X778
MOM ON
ON
12144-2R X778
MOM ON MOM
12145 X778
ON MOM
I
II
III
12156 X778
ON
-
ON
12159 X778
ON
OFF
ON
12157 X778
MOM OFF MOM
12158 X778
ON
OFF MOM
I
II
III
12166 X778
ON
-
ON
12169 X778
ON
OFF
ON
12167 X778
MOM OFF MOM
12168 X778
ON
OFF MOM
12164 X778
ON
12164-1R X778
ON
ON MOM
12164-2R X778
MOM ON MOM
Shown with standard lever
Flat
43
2
3
1
2
- 1
(.098)
(.047)
(.
0
6
)
1
.7
0
1.20
2.50
(.
1
6
1
)
4
.1
0
(.039)
1.00
(.
3
8
)
8
.6
0
(.681)
(.409)
(.594)
(.161)
(.
0
1
9
)
(.
6
2
9
)
(.629)
(.
2
3
6
)
(.
0
9
8
)
A
(15/32-32UNS)
EPOXY
(.
1
5
7
)
I
II
III
15.10
4.10
17.30
10.40
16.00
11.90-32UNS
4
.0
0
.5
0
1
6
.0
0
2
.5
0
6
.0
0
6
.0
0
(.
2
3
6
D
IA
)
(.059)
1.50
0
.5
0
10.40
17.30
4.10
15.10
III
II
I
A
(.
0
1
9
)
(.161)
(.594)
(.409)
(.681)
6
.0
0
2
.5
0
(.
0
9
8
)
(.
2
3
6
)
1
6
.0
0
(.
6
2
9
)
(.
1
5
7
)
4
.0
0
EPOXY
6
.0
0
(.
2
3
6
D
IA
)
11.90-32UNS
(15/32-32UNS)
(.866)
22.00
1.50
(.059)
0
.5
0
10.40
17.30
4.10
15.10
III
II
I
A
(.
0
1
9
)
(.161)
(.594)
(.409)
(.681)
4
.0
0
(.
1
5
7
)
(.
2
3
6
)
(.
0
9
8
)
2
.5
0
6
.0
0
(.
2
3
6
D
IA
)
6
.0
0
(15/32-32UNS)
11.90-32UNS
(.
6
2
9
)
1
6
.0
0
(1.106)
28.10
(.059)
1.50
EPOXY
Function 6
Typical angle of throw (A)
24°
Functions 9, 7, 8, 4
20°
Function 5
12°
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SI7601DN | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET |
| SI7601DN-T1-E3 | 功能描述:MOSFET 20V 16A 52W 19.2mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7601DN-T1-GE3 | 功能描述:MOSFET 20V 16A 52W 19.2mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7606DN-T1-E3 | 功能描述:MOSFET 125V 14.5A 52W 108mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7611DN-T1-GE3 | 功能描述:MOSFET 40V 18A 39W 25mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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