参数资料
型号: SI4158DY-T1-GE3
厂商: Vishay Siliconix
文件页数: 1/10页
文件大小: 0K
描述: MOSFET N-CH D-S 20V 8-SOIC
标准包装: 2,500
系列: TrenchFET®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 36.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 2.5 毫欧 @ 20A,10V
Id 时的 Vgs(th)(最大): 2.1V @ 250µA
闸电荷(Qg) @ Vgs: 132nC @ 10V
输入电容 (Ciss) @ Vds: 5710pF @ 10V
功率 - 最大: 6W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 带卷 (TR)
New Product
Si4158DY
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
20
R DS(on) ( Ω )
0.0025 at V GS = 10 V
0.003 at V GS = 4.5 V
I D (A) a
36.5
33.3
Q g (Typ.)
40 nC
?
?
?
?
Halogen-free
TrenchFET ? Power MOSFET
100 % R g Tested
100 % UIS Tested
APPLICATIONS
? Low-Side MOSFET for Synchronous Buck
SO- 8
? OR-ing
D
S
S
S
1
2
3
8
7
6
D
D
D
G
4
5
D
G
Top V ie w
S
Orderin g Information: Si415 8 DY-T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
N -Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
20
± 16
36.5
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
27
25.8 b, c
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = 0.1 mH
I DM
I S
I AS
E AS
20.5 b, c
70
5.4
2.7 b, c
40
80
A
mJ
T C = 25 °C
6.0
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
3.3
3.0 b, c
W
T A = 70 °C
1.9 b, c
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient b, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
R thJA
R thJF
33
16
42
21
°C/W
Notes:
a. Based on T C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Document Number: 69054
S-82775-Rev. A, 17-Nov-08
www.vishay.com
1
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