参数资料
型号: SI4932DY-T1-GE3
厂商: Vishay Siliconix
文件页数: 1/7页
文件大小: 0K
描述: MOSFET N-CH DUAL 30V 8-SOIC
标准包装: 2,500
系列: TrenchFET®
FET 型: 2 个 N 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 8A
开态Rds(最大)@ Id, Vgs @ 25° C: 15 毫欧 @ 7A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 250µA
闸电荷(Qg) @ Vgs: 48nC @ 10V
输入电容 (Ciss) @ Vds: 1750pF @ 15V
功率 - 最大: 3.2W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 带卷 (TR)

Si4932DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
? Halogen-free According to IEC 61249-2-21
V DS (V)
30
R DS(on) ( Ω )
0.015 at V GS = 10 V
0.017 at V GS = 4.5 V
I D (A) a, e
8
8
Q g (Typ.)
14.7
? TrenchFET ? Power MOSFET
? 100 % R g Tested
? 100 % UIS Tested
APPLICATIONS
? DC/DC Conversion
? Load Switching
SO-8
D 1
D 2
S 1
1
8
D 1
G 1
S 2
G 2
2
3
4
7
6
5
D 1
D 2
D 2
G 1
G 2
Top V ie w
Orderin g Information: Si4932DY-T1-GE3 (Lead (P b )-free and Halogen-free)
S 1
N -Channel MOSFET
S 2
N -Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
30
± 20
8 e
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
8
8 e
b, c, e
T A = 70 °C
6.8 b, c
Pulsed Drain Current (10 μs Pulse Width)
I DM
30
A
Source-Drain Current Diode Current
Pulsed Source-Drain Current
T C = 25 °C
T A = 25 °C
I S
I SM
2.6
1.7 b, c
30
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
I AS
E AS
20
20
mJ
T C = 25 °C
3.2
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
2.1
2 b, c
W
T A = 70 °C
1.28 b, c
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient b, d t ≤ 10 s
Maximum Junction-to-Foot (Drain) Steady State
Symbol
R thJA
R thJF
Typical
47
28
Maximum
62.5
38
Unit
°C/W
Notes:
a. Based on T C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W.
e. Package limited.
Document Number: 69012
S-83042-Rev. A, 22-Dec-08
www.vishay.com
1
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