参数资料
型号: SI4936CDY-T1-GE3
厂商: Vishay Siliconix
文件页数: 1/10页
文件大小: 0K
描述: MOSFET N-CH DUAL 30V 8-SOIC
标准包装: 1
系列: TrenchFET®
FET 型: 2 个 N 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 5.8A
开态Rds(最大)@ Id, Vgs @ 25° C: 40 毫欧 @ 5A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 9nC @ 10V
输入电容 (Ciss) @ Vds: 325pF @ 15V
功率 - 最大: 2.3W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOIC(窄型)
包装: 标准包装
其它名称: SI4936CDY-T1-GE3DKR
New Product
Si4936CDY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V DS (V) R DS(on) ( Ω )
I D (A) d
Q g (Typ.)
FEATURES
? Halogen-free According to IEC 61249-2-21
Definition
30
0.040 at V GS = 10 V
0.050 at V GS = 4.5 V
5.8
5.5
2.8 nC
? TrenchFET ? Power MOSFET
APPLICATIONS
? Low Current DC/DC Conversion
? Notebook System Power
SO-8
S 1
G 1
S 2
G 2
1
2
3
4
8
7
6
5
D 1
D 1
D 2
D 2
G 1
D 1
G 2
D 2
Top V ie w
S 1
S 2
Orderin g Information: Si4936CDY-T1-GE3 (Lead (P b )-free and Halogen-free)
N -Channel MOSFET
N -Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
30
± 20
5.8
Unit
V
Continuous Drain Current (T J = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
T C = 70 °C
T A = 25 °C
T A = 70 °C
T C = 25 °C
T A = 25 °C
T C = 25 °C
I D
I DM
I S
4.6
5.0 a, b
4.0 a, b
20
1.9
1.4 a, b
2.3
A
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
1.5
1.7 a, b
W
T A = 70 °C
1.1 a, b
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
a, c
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
R thJA
R thJF
58
42
75
55
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 110 °C/W.
d. Based on T C = 25 °C.
Document Number: 69097
S09-0390-Rev. C, 09-Mar-09
www.vishay.com
1
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