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参数资料
| 型号： | SI4943DY-T1-E3 |
| 厂商： | VISHAY SILICONIX |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 6300 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | LEAD FREE, SOP-8 |
| 文件页数： | 1/5页 |
| 文件大小： | 65K |
| 代理商： | SI4943DY-T1-E3 |
FEATURES
D TrenchFETr Power MOSFET
APPLICATIONS
D Load Switching
- Computer
- Game Systems
D Battery Switching
- 2-Cell Li-lon
Si4943DY
Vishay Siliconix
New Product
Document Number: 71682
S-21192—Rev. B, 29-Jul-02
www.vishay.com
1
Dual P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
- 20
0.019 @ VGS = - 10 V
- 8.4
- 20
0.030 @ VGS = - 4.5 V
- 6.7
S1
D1
G1
D1
S2
D2
G2
D2
SO-8
5
6
7
8
Top View
2
3
4
1
S1
G1
D1 D1
P-Channel MOSFET
S2
G2
D2 D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
"20
V
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
ID
- 8.4
- 6.3
Continuous Drain Current (TJ = 150_C)a
TA = 70_C
ID
- 6.7
- 5.1
A
Pulsed Drain Current
IDM
-30
A
continuous Source Current (Diode Conduction)a
IS
- 1.7
- 0.9
Maximum Power Dissipationa
TA = 25_C
PD
2.0
1.1
W
Maximum Power Dissipationa
TA = 70_C
PD
1.3
0.7
W
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Mi
J
ti
t A bi
ta
t
v 10 sec
R
45
62.5
Maximum Junction-to-Ambienta
Steady State
RthJA
85
110
_C/W
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
26
35
C/W
Notes
a.
Surface Mounted on 1 ” x 1” FR4 Board.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SI4944DY | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 30-V (D-S) MOSFET |
| SI4944DY-T1 | 制造商:Vishay Semiconductors 功能描述: |
| SI4944DY-T1-E3 | 功能描述:MOSFET DUAL N-CH 30V (D-S) RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI4944DY-T1-GE3 | 功能描述:MOSFET 30V 12.2A 2.3W 9.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| Si4946BEY | 制造商:Vishay Intertechnologies 功能描述:Trans MOSFET N-CH 60V 5.3A 8-Pin SOIC N |
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