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参数资料
| 型号： | NCV8535MN330R2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 5/22页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO 3.3V .7A 10-DFN |
| 标准包装： | 3,000 |
| 稳压器拓扑结构： | 正，固定式 |
| 输出电压： | 3.3V |
| 输入电压： | 3.7 V ~ 12 V |
| 稳压器数量： | 1 |
| 电流 - 输出： | 700mA |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 10-VFDFN 裸露焊盘 |
| 供应商设备封装： | 10-DFN（3x3） |
| 包装： | 带卷 (TR) |
NCV8535
ELECTRICAL CHARACTERISTICS – 5.0 V
(V out = 5.0 V typical, V in = 5.4 V, T A = ? 40 ? C to +85 ? C, unless otherwise noted, Note 2.)
Characteristic
Output Voltage (Accuracy)
V in = 5.4 V to 9.0 V, I load = 0.1 mA to 500 mA, T A = 25 ? C
Output Voltage (Accuracy)
V in = 5.4 V to 9.0 V, I load = 0.1 mA to 500 mA, T A = 0 ? C to +85 ? C
Output Voltage (Accuracy)
V in = 5.4 V to 9.0 V, I load = 0.1 mA to 500 mA, T A = ? 40 ? C to +125 ? C
Symbol
V out
V out
V out
Min
? 0.9%
4.955
? 1.4%
4.930
? 1.5%
4.925
Typ
5.0
5.0
5.0
Max
+0.9%
5.045
+1.4%
5.070
+1.5%
5.075
Unit
V
V
V
Line Regulation
V in = 5.4 V to 12 V, I load = 0.1 mA
Load Regulation
V in = 5.4 V, I load = 0.1 mA to 500 mA
Dropout Voltage (See App Note)
I load = 500 mA
I load = 300 mA
I load = 50 mA
I load = 0.1 mA
Line Reg
Load Reg
V DO
0.04
0.04
340
230
110
10
mV/V
mV/mA
mV
Peak Output Current (See Figure 16)
Ipk
500
700
830
mA
Short Output Current (See Figure 16)
Thermal Shutdown
I sc
T J
160
930
mA
? C
Ground Current
In Regulation
I load = 500 mA (Note 3)
I load = 300 mA (Note 3)
I load = 50 mA
I load = 0.1 mA
In Dropout
V in = 4.9 V, I load = 0.1 mA
In Shutdown
S D = 0 V
I GND
I GNDsh
9.0
4.6
0.8
?
?
0.07
14
7.5
2.5
190
500
1.0
mA
m A
m A
m A
Output Noise
C nr = 0 nF, I load = 500 mA, f = 10 Hz to 100 kHz, C out = 10 m F
C nr = 10 nF, I load = 500 mA, f = 10 Hz to 100 kHz, C out = 10 m F
Shutdown
Threshold Voltage ON
Threshold Voltage OFF
V noise
2.0
93
58
0.4
m Vrms
m Vrms
V
V
S D Input Current, V SD = 0 V to 0.4 V or V SD = 2.0 V to V in
Output Current In Shutdown Mode, V out = 0 V
Reverse Bias Protection, Current Flowing from the Output Pin to GND
(V in = 0 V, V out_forced = 5.0 V)
I SD
I OSD
I OUTR
0.07
0.07
10
1.0
1.0
m A
m A
m A
2. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at T J = T A = 25 ? C. Low
duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
3. T A must be greater than 0 ? C.
http://onsemi.com
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