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参数资料
| 型号： | SMB8J14C-E3/55 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 800 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封装： | ROHS COMPLIANT, PLASTIC, SMB, 2 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 105K |
| 代理商： | SMB8J14C-E3/55 |
Vishay General Semiconductor
SMB10(8)J5.0(C) thru SMB10(8)J40(C)A
Document Number 88422
12-Sep-06
www.vishay.com
1
High Power Density Surface Mount TRANSZORB
Transient Voltage Suppressors
FEATURES
Low profile package
Ideal for automated placement
Glass passivated chip junction
Available in Unidirectional and Bidirectional
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Meets MSL level 1, per J-STD-020C, LF max peak
of 260 °C
Solder Dip 260 °C, 40 seconds
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-214AA (SMBJ)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: For unidirectional types the color band
denotes cathode end, no marking on bidirectional
types
DO-214AA (SMB)
MAJOR RATINGS AND CHARACTERISTICS
VWM
5.0 V to 40 V
PPPM (Unidirectional)
1000 W
PPPM (Bidirectional)
800 W
IFSM (Unidirectional only)
100 A
Tj max.
150 °C
Note:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Peak pulse power dissipation with a 10/1000 s
waveform (1,2) (see Fig. 1)
Unidirectional
Bidirectional
PPPM
1000
800
W
Peak pulse current with a 10/1000 s waveform (1)
IPPM
see next table
A
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
IFSM
100
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
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| SMB8J40CA-E3/51 | 800 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
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| SMB10J8.5A-E3/2C | 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMB8J15CA-E3/2C | 800 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SMB8J14CHE3/2C | 功能描述:TVS 二极管 - 瞬态电压抑制器 800W 14V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMB8J14CHE3/52 | 功能描述:TVS 二极管 - 瞬态电压抑制器 800W 14V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMB8J14CHE3/55 | 功能描述:TVS 二极管 - 瞬态电压抑制器 800W 14V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMB8J14CHE3/5B | 功能描述:TVS 二极管 - 瞬态电压抑制器 800W 14V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMB8J15C | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Power Density Surface Mount TRANSZORB? Transient Voltage Suppressors |
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