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参数资料
| 型号： | SMB8J14CHE3/52 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 800 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封装： | ROHS COMPLIANT, PLASTIC, SMB, 2 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 103K |
| 代理商： | SMB8J14CHE3/52 |
SMB10(8)J5.0(C) thru SMB10(8)J40(C)A
Vishay General Semiconductor
Document Number: 88422
Revision: 22-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
High Power Density Surface Mount TRANSZORB
Transient Voltage Suppressors
FEATURES
Low profile package
Ideal for automated placement
Glass passivated chip junction
Available in uni-directional and bi-directional
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-214AA (SMBJ)
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC Q101 qualified)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3
suffix meets JESD 201 class 2 whisker test
Polarity: For uni-directional types the color band
denotes cathode end, no marking on bi-directional
types
PRIMARY CHARACTERISTICS
VWM
5.0 V to 40 V
PPPM (uni-directional)
1000 W
PPPM (bi-directional)
800 W
IFSM (uni-directional only)
100 A
TJ max.
150 °C
DO-214AA (SMB)
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Peak pulse power dissipation with a 10/1000 s
waveform (1)(2) (Fig. 1)
uni-directional
bi-directional
PPPM
1000
800
W
Peak pulse current with a 10/1000 s waveform (1)
IPPM
See next table
A
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
IFSM
100
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
相关PDF资料 |
PDF描述 |
|---|---|
| SMB8J16CAHE3/52 | 800 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMB8J17CHE3/52 | 800 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMB8J20CAHE3/52 | 800 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMB8J22CAHE3/52 | 800 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMB8J22CAHE3/5B | 800 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SMB8J15C | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Power Density Surface Mount TRANSZORB? Transient Voltage Suppressors |
| SMB8J15CA | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Power Density Surface Mount TRANSZORB? Transient Voltage Suppressors |
| SMB8J15CA-E3/2C | 功能描述:TVS 二极管 - 瞬态电压抑制器 800W 15V 5% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMB8J15CA-E3/51 | 功能描述:TVS 二极管 - 瞬态电压抑制器 800W 15V 5% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMB8J15CA-E3/52 | 功能描述:TVS 二极管 - 瞬态电压抑制器 800W 15V 5% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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