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参数资料
型号： SMBJ150CA-52
厂商： GENERAL SEMICONDUCTOR INC
元件分类： TVS二极管 - 瞬态电压抑制
英文描述： 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
封装： PLASTIC, SMB, 2 PIN
文件页数： 1/4页
文件大小： 75K
代理商： SMBJ150CA-52
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.008
(0.203)
Max.
0.220 (5.59)
0.205 (5.21)
0.060 (1.52)
0.030 (0.76)
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.096 (2.44)
0.084 (2.13)
Cathode Band
SMBJ5.0 thru 188CA
Surface Mount TRANSZORB
Transient Voltage Suppressors
Stand-off Voltage 5.0 to 188V
Peak Pulse Power 600W
Dimensions in inches
and (millimeters)
DO-214AA (SMB J-Bend)
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Low profile package with built-in strain relief for surface
mounted applications
Glass passivated junction
Low incremental surge resistance, excellent clamping
capability
600W peak pulse power capability with a 10/1000
s
waveform, repetition rate (duty cycle): 0.01%
Very fast response time
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Contact local sales office for gull-wing (SMBG prefix)
lead form (DO-215AA)
Mechanical Data
Case: JEDEC DO-214AA molded plastic over
passivated junction
Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity: For unidirectional types the band denotes the
cathode, which is positive with respect to the anode
under normal TVS operation
Weight: 0.003oz., 0.093g
Packaging Codes – Options (Antistatic):
51 – 2K per Bulk box, 20K/carton
52 – 750 per 7” plastic Reel (12mm tape), 15K/carton
5B – 3.2K per 13” plastic Reel (12mm tape), 32K/carton
0.106 MAX
(2.69 MAX)
0.050 MIN
(1.27 MIN)
0.220 REF
0.083 MIN
(2.10 MIN)
Mounting Pad Layout
Extended
Voltage
Range
Devices for Bidirectional Applications
For bi-directional devices, use suffix C or CA (e.g. SMBJ10C, SMBJ10CA). Electrical characteristics apply in both directions.
.
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Peak pulse power dissipation with
PPPM
Minimum 600
W
a 10/1000
s waveform(1)(2) (Fig. 1)
Peak pulse current with a 10/1000
s waveform(1)
IPPM
See Table Below
A
Peak forward surge current 8.3ms single half sine-wave
IFSM
100
A
uni-directional only(2)
Typical thermal resistance, junction to ambient(4)
R
θJA
100
°C/W
Typical thermal resistance, junction to lead
R
θJL
20
°C/W
Operating junction and storage temperature range
TJ, TSTG
–55 to +150
°C
Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above TA = 25°C per Fig. 2
(2) Mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pads to each terminal
(3) Mounted on minimum recommended pad layout
10/17/01
相关PDF资料
PDF描述
SMBJ170CA-51 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
SMBJ45-51 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
SMBJ54A-5B 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
SMBJ58-52 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
SMBJ7.0-52 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
相关代理商/技术参数
参数描述
SMBJ150CA-7 功能描述:TVS 二极管 - 瞬态电压抑制器 150V 600 Watts RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
SMBJ150CA-7P 功能描述:TVS 二极管 - 瞬态电压抑制器 150V 600 Watts RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
SMBJ150CAE3 制造商:Microsemi Corporation 功能描述:TVS SGL BI-DIR 150V 600W 2PIN DO-214AA - Bulk
SMBJ150CA-E3/1 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 150V 5% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
SMBJ150CA-E3/2C 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 150V 5% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
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