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参数资料
| 型号： | SMBJ24CA-HE3/5B |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封装： | ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 107K |
| 代理商： | SMBJ24CA-HE3/5B |
Vishay General Semiconductor
SMBJ5.0 thru SMBJ188CA
Document Number 88392
08-Sep-06
www.vishay.com
1
Surface Mount TRANSZORB Transient Voltage Suppressors
FEATURES
Low profile package
Ideal for automated placement
Glass passivated chip junction
Available in Unidirectional and Bidirectional
600 W peak pulse power capability with a
10/1000 s waveform, repetitive rate (duty cycle):
0.01 %
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Meets MSL level 1, per J-STD-020C, LF max peak
of 260 °C
Solder Dip 260 °C, 40 seconds
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-214AA (SMBJ)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: For unidirectional types the band denotes
cathode end, no marking on bidirectional types
DO-214AA (SMB J-Bend)
DEVICES FOR BIDIRECTION APPLICATIONS
For
bidirectional
devices
use
C
or
CA
suffix
(e.g. SMBJ10CA).
Electrical characteristics apply in both directions.
MAJOR RATINGS AND CHARACTERISTICS
VWM
5.0 V to 188 V
PPPM
600 W
IFSM (Unidirectional only)
100 A
Tj max.
150 °C
Note:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Peak pulse power dissipation with a 10/1000 s waveform (1,2) (see Fig. 1)
PPPM
Minimum 600
W
Peak pulse current with a 10/1000 s waveform (1)
IPPM
see next table
A
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
IFSM
100
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
相关PDF资料 |
PDF描述 |
|---|---|
| SMBJ26C-HE3/5B | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMBJ26CA-HE3/52 | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMBJ28A-HE3/5B | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMBJ30C-HE3/5B | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMBJ33-HE3/5B | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SMBJ24CA-M3/52 | 制造商:Vishay Semiconductors 功能描述:600W,24V 5%,BIDIR,SMB TVS |
| SMBJ24CA-M3/5B | 制造商:Vishay Semiconductors 功能描述:600W,24V 5%,BIDIR,SMB TVS |
| SMBJ24CA-TP | 功能描述:TVS 二极管 - 瞬态电压抑制器 24V 600 Watts RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ24CATR | 制造商:SynSemi Inc 功能描述: |
| SMBJ24CA-TR | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 24V Bidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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