1
2
15.25
14.0
0.45
LEAD
10.16
20
nom.
5.5
SMP900G-JP
Prelim. 1/98
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
MECHANICAL DATA
Dimensions in mm.
P.I.N. PHOTODIODE
DESCRIPTION
The SMP900G-JP is a Silicon P.I.N. photodiode
incorporated in a hermetic metal can package. The
electrical terminations are via two leads of diameter 0.018"
on a pitch of 0.2". The cathode of the photodiode is
electrically connected to the package.
The large photodiode active area provides greater
sensitivity than the SMP690 range of devices, with a
corresponding reduction in speed. The photodiode
structure has been optimised for high sensitivity, light
measurement applications. The metal can and optional
screening mesh ensure a rugged device with a high
degree of immunity to radiated electrical interference.
TO8
Operating temperature range
Storage temperature range
Temperature coefficient of responsively
Temperature coefficient of dark current
Reverse breakdown voltage
-40°C to +70°C
-45°C to +80°C
0.35% per °C
x2 per 8°C rise
60V
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
FEATURES
HIGH SENSITIVITY
EXCELLENT LINEARITY
LOW NOISE
WIDE SPECTRAL RESPONSE
INTEGRAL OPTICAL FILTER OPTION note 1
TO8 HERMETIC METAL CAN PACKAGE
EMI SCREENING MESH AVAILABLE
Note 1 Contact Semelab Plc for filter options
Pin 1 – Anode
Pin 2 – Cathode & Case