参数资料
型号: SN74CBV3857DWR
厂商: TEXAS INSTRUMENTS INC
元件分类: 总线收发器
英文描述: CBV SERIES, 10-BIT DRIVER, TRUE OUTPUT, PDSO24
封装: SOP-24
文件页数: 1/7页
文件大小: 88K
代理商: SN74CBV3857DWR
SN74CBV3857
2.5-V 10-BIT FET BUS SWITCH
FOR DDR DIMMS
DESIGN GOAL
SCDS086A – FEBRUARY 1999 – REVISED MAY L999
1
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
D Designed to be Used With 2.5-V DDR DIMM
Applications
D Switch On-State Resistance is Designed to
Eliminate the Series Resistor to the
DDR SDRAM
D Internal 200- Pulldown n-Channel FET to
Ground on Port B
D Internal 50-k Pullup Resistor on
Output-Enable Input
D Enable Signal Is SSTL_2 Compatible
D Flow-Through Architecture Optimizes PCB
Layout
D Package Options Include Shrink
Small-Outline (DBQ), Thin Very
Small-Outline (DGV), Small-Outline (DW),
and Thin Shrink Small-Outline (PW)
Packages
description
The SN74CBV3857 10-bit FET bus switch is designed for 2.3-V to 2.7-V VCC.
When the output-enable (OE) input is low, the 10-bit bus switch is on and port A is connected to port B. When
OE is high, the switch is open, the high-impedance state exists between the two ports, and port B is pulled down
by a 200-
n-channel FET to ground.
The FET switch on-state resistance is designed to replace the series terminating resistor in the SSTL_2 signal
path (see Figure 1).
11
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
0
7
9
13
15
17
19
21
Weak
Strong
Nominal
VI – Volts
on
r
Figure 1. On-State Resistance Characteristics
PRODUCT
PREVIEW
PRODUCT PREVIEW information concerns products in the formative or
design phase of development. Characteristic data and other
specifications are design goals. Texas Instruments reserves the right to
change or discontinue these products without notice.
Copyright
1999, Texas Instruments Incorporated
DESIGN GOAL
DBQ, DGV, DW, OR PW PACKAGE
(TOP VIEW)
VREF
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
GND
VCC
OE
B1
B2
B3
B4
B5
B6
B7
B8
B9
B10
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
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