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| 型号： | SN74V3650-6PEU |
| 厂商： | Texas Instruments, Inc. |
| 英文描述： | 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES |
| 中文描述： | 的3.3V的CMOS先入先出存储器 |
| 文件页数： | 11/50页 |
| 文件大小： | 729K |
| 代理商： | SN74V3650-6PEU |
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SN74V3640, SN74V3650, SN74V3660, SN74V3670, SN74V3680, SN74V3690
1024
×
36, 2048
×
36, 4096
×
36, 8192
×
36, 16384
×
36, 32768
×
36
3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES
SCAS668A
–
NOVEMBER 2001
–
REVISED MARCH 2003
11
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
programmable-flag mode (PFM)
During master reset, a low on PFM selects asynchronous programmable-flag timing mode. A high on PFM
selects synchronous programmable-flag timing mode. If asynchronous PAF/PAE configuration is selected
(PFM low during MRS), PAE is asserted low on the low-to-high transition of RCLK. PAE is reset to high on the
low-to-high transition of WCLK. Similarly, PAF is asserted low on the low-to-high transition of WCLK, and PAF
is reset to high on the low-to-high transition of RCLK.
If synchronous PAE/PAF configuration is selected (PFM high during MRS), PAE is asserted and updated on the
rising edge of RCLK only, and not WCLK. Similarly, PAF is asserted and updated on the rising edge of WCLK
only and not RCLK. The mode desired is configured during master reset by the state of the PFM.
interspersed parity (IP)
During master reset, a low on IP selects noninterspersed-parity mode. A high selects interspersed-parity mode.
The IP bit function allows the user to select the parity bit in the word loaded into the parallel port (D0
–
Dn) when
programming the flag offsets. If interspersed-parity mode is selected, the FIFO assumes that the parity bits are
located in bit positions D8, D17, D26, and D35 during the parallel programming of the flag offsets. If
noninterspersed-parity mode is selected, D8, D17, and D28 are assumed to be valid bits and D32, D33, D34,
and D35 are ignored. IP mode is selected during master reset by the state of the IP input pin. Interspersed-parity
control has an effect only during parallel programming of the offset registers. It does not affect the data written
to, and read from, the FIFO.
outputs
full flag/input ready (FF/IR)
FF/IR is a dual-purpose pin. In standard mode, the FF function is selected. When the FIFO is full, FF goes low,
inhibiting further write operations. When FF is high, the FIFO is not full. If no reads are performed after a reset
(either MRS or PRS), FF goes low after D writes to the FIFO (D = 1024 for the SN74V3640, D = 2048 for the
SN74V3650, D = 4096 for the SN74V3660, D = 8192 for the SN74V3670, D = 16384 for the SN74V3680, and
D = 32768 for the SN74V3690).
See Figure 7 for timing information.
In FWFT mode, the IR function is selected. IR goes low when memory space is available for writing in data.
When there is no longer any free space left, IR goes high, inhibiting further write operations. If no reads are
performed after a reset (either MRS or PRS), IR goes high after D writes to the FIFO (D = 1025 for the
SN74V3640, D = 2049 for the SN74V3650, D = 4097 for the SN74V3660, D = 8193 for the
SN74V3670, D = 16385 for the SN74V3680, and D = 32769 for the SN74V3690).
See Figure 9 for timing information.
The IR status not only measures the contents of the FIFO memory, but also counts the presence of a word in
the output register. Thus, in FWFT mode, the total number of writes necessary to deassert IR is one greater than
needed to assert FF in standard mode.
FF/IR is synchronous and updated on the rising edge of WCLK. FF/IR are double register-buffered outputs.
相关PDF资料 |
PDF描述 |
|---|---|
| SN74V3660-10PEU | 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES |
| SN74V3660-15PEU | 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES |
| SN74V3670-10PEU | 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES |
| SN74V3670-15PEU | 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES |
| SN74V3690-15PEU | 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SN74V3650-7PEU | 功能描述:先进先出 2048 x 36 Synch 先进先出 Memory RoHS:否 制造商:IDT 电路数量: 数据总线宽度:18 bit 总线定向:Unidirectional 存储容量:4 Mbit 定时类型:Synchronous 组织:256 K x 18 最大时钟频率:100 MHz 访问时间:10 ns 电源电压-最大:3.6 V 电源电压-最小:6 V 最大工作电流:35 mA 最大工作温度:+ 85 C 封装 / 箱体:TQFP-80 封装: |
| SN74V3660-10PEU | 功能描述:先进先出 4096 x 36 Synch 先进先出 Memory RoHS:否 制造商:IDT 电路数量: 数据总线宽度:18 bit 总线定向:Unidirectional 存储容量:4 Mbit 定时类型:Synchronous 组织:256 K x 18 最大时钟频率:100 MHz 访问时间:10 ns 电源电压-最大:3.6 V 电源电压-最小:6 V 最大工作电流:35 mA 最大工作温度:+ 85 C 封装 / 箱体:TQFP-80 封装: |
| SN74V3660-15PEU | 功能描述:先进先出 4096 x 36 Synch 先进先出 Memory RoHS:否 制造商:IDT 电路数量: 数据总线宽度:18 bit 总线定向:Unidirectional 存储容量:4 Mbit 定时类型:Synchronous 组织:256 K x 18 最大时钟频率:100 MHz 访问时间:10 ns 电源电压-最大:3.6 V 电源电压-最小:6 V 最大工作电流:35 mA 最大工作温度:+ 85 C 封装 / 箱体:TQFP-80 封装: |
| SN74V3660-6PEU | 功能描述:先进先出 4096 x 36 Synch 先进先出 Memory RoHS:否 制造商:IDT 电路数量: 数据总线宽度:18 bit 总线定向:Unidirectional 存储容量:4 Mbit 定时类型:Synchronous 组织:256 K x 18 最大时钟频率:100 MHz 访问时间:10 ns 电源电压-最大:3.6 V 电源电压-最小:6 V 最大工作电流:35 mA 最大工作温度:+ 85 C 封装 / 箱体:TQFP-80 封装: |
| SN74V3660-7PEU | 功能描述:先进先出 4096 x 36 Synch 先进先出 Memory RoHS:否 制造商:IDT 电路数量: 数据总线宽度:18 bit 总线定向:Unidirectional 存储容量:4 Mbit 定时类型:Synchronous 组织:256 K x 18 最大时钟频率:100 MHz 访问时间:10 ns 电源电压-最大:3.6 V 电源电压-最小:6 V 最大工作电流:35 mA 最大工作温度:+ 85 C 封装 / 箱体:TQFP-80 封装: |
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