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参数资料
| 型号： | SRDA3.3-4.TBT |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, MS-012AA |
| 封装： | ROHS COMPLIANT, SOIC-8 |
| 文件页数： | 4/8页 |
| 文件大小： | 188K |
| 代理商： | SRDA3.3-4.TBT |
4
2008 Semtech Corp.
www.semtech.com
PROTECTION PRODUCTS
SRDA3.3-4
Data Line Protection Using Internal TVS Diode as
Reference
Applications Information
Device Connection Options for Protection of Four
High-Speed Data Lines
These devices are designed to protect low voltage data
lines operating at 3.3 volts. When the voltage on the
protected line exceeds the punch-through or “turn-on”
voltage of the TVS diode, the steering diodes are
forward biased, conducting the transient current away
from the sensitive circuitry.
Data lines are connected at pins 1, 4, 6 and 7. Pins 5
and 8 should be connected directly to a ground plane.
The path length is kept as short as possible to
minimize parasitic inductance.
Note that pins 2 and 3 are connected internally to the
cathode of the low voltage TVS. It is not recommended
that these pins be directly connected to a DC source
greater than the snap-back votlage (V
SB) as the device
can latch on as described below.
EPD TVS Characteristics
These devices are constructed using Semtech’s
proprietary EPD technology. By utilizing the EPD tech-
nology, the SRDA3.3-4 can effectively operate at 3.3V
while maintaining excellent electrical characteristics.
The EPD TVS employs a complex nppn structure in
contrast to the pn structure normally found in tradi-
tional silicon-avalanche TVS diodes. Since the EPD
TVS devices use a 4-layer structure, they exhibit a
slightly different IV characteristic curve when compared
to conventional devices. During normal operation, the
device represents a high-impedance to the circuit up to
the device working voltage (V
RWM). During an ESD
event, the device will begin to conduct and will enter a
low impedance state when the punch through voltage
(V
PT) is exceeded. Unlike a conventional device, the low
voltage TVS will exhibit a slight negative resistance
characteristic as it conducts current. This characteris-
tic aids in lowering the clamping voltage of the device,
but must be considered in applications where DC
voltages are present.
When the TVS is conducting current, it will exhibit a
slight “snap-back” or negative resistance characteris-
tics due to its structure. This point is defined on the
curve by the snap-back voltage (V
SB) and snap-back
EPD TVS IV Characteristic Curve
IPP
I
SB
IPT
I
R
VRWM
V
PT VC
VBRR
I
BRR
SB
current (I
SB).
To return to a non-conducting state, the
current through the device must fall below the I
SB
(approximately <50mA) and the voltage must fall below
the V
SB (normally 2.8 volts for a 3.3V device). If a 3.3V
TVS is connected to 3.3V DC source, it will never fall
below the snap-back voltage of 2.8V and will therefore
stay in a conducting state.
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