Huajing Discrete DevicesGeneral Description:CS840FA9H, the silicon N-channel EnhancedVDMOSFETs, is obtained by the self-aligned planar Technologywhich reduce the conduction loss, improve switchingperformance and enhance the avalanche energy. The transistorcan be used in various power switching circuit for systemminiaturization and higher efficiency. The package form is TO-220F,which accords with the RoHS standard.Features:l Fast Switchingl Low ON Resistance(Rdson≤0.75Ω)l Low Gate Charge (Typical Data:28nC)l Low Reverse transfer capacitances(Typical:18pF)l 100% Single Pulse avalanche energy TestApplications:Power switch circuit of adaptor and charger.