参数资料
型号: T431616E-7SG
厂商: TM Technology, Inc.
英文描述: 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
中文描述: 100万× 16内存为512k × 16Bit的X 2Banks同步DRAM
文件页数: 64/74页
文件大小: 781K
代理商: T431616E-7SG
TE
CH
tm
T431616D/E
TM Technology Inc. reserves the right
P. 64
to change products or specifications without notice.
Publication Date: FEB. 2007
Revision: A
Figure 19.2. Full Page Write Cycle
(Burst Length=Full Page, CAS# Latency=2)
T0
T 1 T2
T3
T4
T5
T6
T7
T8
T9
T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
CS#
RAS#
CAS#
WE#
A10
A0~A9
DQM
DQ
A11
DAx+1
DAx
Activate
Command
Bank A
Hi-Z
Activate
Command
Bank B
The burst counter wraps
from the highest order
page address back to zero
during this time interval
RAx
RAx
Burst Stop
Command
CBx
High
Write
Command
Bank B
Precharge
Command
Bank B
RBx
CAx
RBy
RBy
Full Page burst operation does
not terminate when the burst
length is satisfied; the burst counter
increments and continues bursting
beginning with the starting address.
Activate
Command
Bank B
t
CK2
DAx+2 DAx+3 DAx-1
DAx
DAx+1
DBx
DBx+1DBx+2DBx+3 DBx+4 DBx+5 DBx+6
Write
Command
Bank A
Data is ignored
RBx
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