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参数资料
| 型号： | TIP32C |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | Complementary Silicon Plastic Power Transistors(互补型，塑料功率晶体管) |
| 中文描述： | 3 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | PLASTIC, CASE 221A-09, 3 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 81K |
| 代理商： | TIP32C |
TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)
http://onsemi.com
4
t, TIME (ms)
1.0
0.7
0.01
0.01
0.1
0.07
r
1.0
1.0
100
Z
JC(t)
= r(t) R
JC
R
JC
(t) = 3.125
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
T
C
= P
(pk)
Z
JC(t)
P
(pk)
t
1
t
2
SINGLE PULSE
1.0 k
D = 0.5
0.05
DUTY CYCLE, D = t
1
/t
2
Figure 4. Thermal Response
0.1
0.05
0.03
0.02
0.5
0.3
0.2
0.02
0.05
0.2
0.5
2.0
5.0
200
500
10
20
50
0.2
0.02
0.01
V
CE
, COLLECTOREMITTER VOLTAGE (VOLTS)
10
20
5.0
50
100
Figure 5. Active Region Safe Operating Area
0.2
0.1
0.5
SECONDARY BREAKDOWN
LIMITED @ T
J
≤
150
°
C
THERMAL LIMIT @ T
C
= 25
°
C
(SINGLE PULSE)
BONDING WIRE LIMIT
1.0ms
100 s
2.0
1.0
10
5.0
I
5.0ms
CURVES APPLY
BELOW RATED V
CEO
TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 150 C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
150 C. T
J(pk)
may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
0.05
0.1
0.2
0.7
0.03
0.3
0.5
0.07
I
C
, COLLECTOR CURRENT (AMP)
Figure 6. TurnOff Time
3.0
2.0
t
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
1.0
2.0
3.0
0.2
0.5
1.0
5.0
0.1
2.0 3.0
0.3
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
300
C
200
100
70
50
30
10
20
40
30
t
f
@ V
CC
= 30 V
t
f
@ V
CC
= 10 V
t
s
′
I
B1
= I
B2
I
C
/I
B
= 10
t
s
′
= t
s
1/8 t
f
T
J
= 25
°
C
T
J
= +25
°
C
C
eb
C
cb
相关PDF资料 |
PDF描述 |
|---|---|
| TIP33 | NPN SILICON POWER TRANSISTORS |
| TIP33A | NPN SILICON POWER TRANSISTORS |
| TIP33B | NPN SILICON POWER TRANSISTORS |
| TIP33C | CONN, D, 37POS, MTL, SHL, EMI, JUNCTION, (890183) |
| TIP34B | COMPLEMENTARY SILICON POWER TRANSISTORS |
相关代理商/技术参数 |
参数描述 |
|---|---|
| TIP32C | 制造商:STMicroelectronics 功能描述:TRANSISTOR PNP TO-220 |
| TIP32C_05 | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:PNP EXPITAXIAL PLANAR TRANSISTOR |
| TIP32C_06 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Power transistor |
| TIP32C_09 | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:PNP EXPITAXIAL PLANAR TRANSISTOR |
| TIP32C119 | 制造商:Harris Corporation 功能描述: |
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