参数资料
型号: UG10BCT-E3/45
厂商: Vishay General Semiconductor
文件页数: 1/5页
文件大小: 143K
描述: DIODE 10A 100V 20NS DUAL TO220-3
标准包装: 1,000
电压 - 在 If 时为正向 (Vf)(最大): 1.1V @ 5A
电流 - 在 Vr 时反向漏电: 10µA @ 100V
电流 - 平均整流 (Io)(每个二极管): 5A
电压 - (Vr)(最大): 100V
反向恢复时间(trr): 25ns
二极管类型: 标准
速度: 快速恢复 =< 500 ns,> 200mA(Io)
二极管配置: 1 对共阴极
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件
BYQ28E(F,B)-100 thru BYQ28E(F,B)-200, UG(F,B)10BCT
Vishay General Semiconductor
Document Number: 88549
Revision: 07-Jan-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common Cathode Ultrafast Rectifier
FEATURES
? Glass passivated chip junction
Ultrafast recovery times
Soft recovery characteristics
Low switching losses, high efficiency
High forward surge capability
Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
Solder dip 260 °C, 40 s (for TO-220AB and
ITO-220AB package)
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching power supplies, freewheeling diodes,
dc-to-dc converters and polarity protection application.
MECHANICAL DATA
Case:
TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0
flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix
for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
5 A x 2
VRRM
100 V, 150 V, 200 V
IFSM
55 A
trr
25 ns
VF
0.895 V
TJ
max. 150 °C
BYQ28E & UG10 BYQ28EF & UGF10
BYQ28EB & UGB10
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
PIN 1
PIN 2
K
HEATSINK
1
32
1
2
K
PIN 2
PIN 1
PIN 3
ITO-220AB
TO-263AB
3
1
2
MAXIMUM RATINGS (TC
= 25 °C unless otherwise noted)
PARAMETER SYMBOL
BYQ28E-100 BYQ28E-150 BYQ28E-200
UG10BCT UG10CCT UG10DCT
UNIT
Maximum repetitive peak reverse voltage VRRM
100 150 200 V
Working peak reverse voltage VRWM
100 150 200 V
Maximum DC blocking voltage VDC
100 150 200 V
Maximum average forward rectified current at TC
= 100 °C
total device
per diode
I
F(AV)
10
5
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
55 A
Non-repetitive peak reverse current per diode at tp = 100 μs IRSM
0.2 A
Electrostatic discharge capacitor voltage,
human body model: C = 250 pF, R = 1.5 kΩ
VC
8 kV
Operating junction and storage temperature range TJ, TSTG
- 40 to + 150 °C
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
VAC
1500 V
相关PDF资料
PDF描述
EEC18DRTF-S13 CONN EDGECARD 36POS .100 EXTEND
BYQ28E-200-E3/45 DIODE ARRAY 200V 5A TO220AB
EEC18DREF-S13 CONN EDGECARD 36POS .100 EXTEND
BYQ28E-150-E3/45 DIODE ARRAY 150V 5A TO220AB
BYQ28E-100-E3/45 DIODE UFAST DUAL 100V TO-220AB
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