参数资料
型号: UNR411XSERIES(UN411XSERIES)
英文描述: UNR411X Series (UN411X Series) - PNP Transistors with built-in Resistor
中文描述: UNR411X系列(UN411X系列) -新进步党内置晶体管,电阻,
文件页数: 6/15页
文件大小: 376K
代理商: UNR411XSERIES(UN411XSERIES)
6
UNR41XX Series
SJH00018CED
C
ob
V
CB
I
O
V
IN
V
IN
I
O
C
ob
V
CB
I
O
V
IN
V
IN
I
O
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
Characteristics charts of UNR4114
0
0.1
0.3
Collector to base voltage V
CB
(V)
6
5
4
3
2
1
1
3
10
30
100
C
o
f
=
1 MHz
I
E
=
0
T
a
=
25
°
C
1
0.4
3
10
30
100
300
1
000
3
000
10
000
1.4
1.2
1.0
0.8
0.6
Input voltage V
IN
(V)
O
O
μ
A
V
O
=
5 V
T
a
=
25
°
C
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
I
I
Output current I
O
(mA)
V
O
0.2 V
T
a
= 25
°
C
0
0
Collector to emitter voltage V
CE
(V)
12
2
10
4
8
6
40
120
80
160
140
100
60
20
C
C
T
a
=
25
°
C
I
B
=
1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
0.3 mA
0.2 mA
0.1 mA
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
C
C
Collector current I
C
(mA)
I
C
/ I
B
=
10
T
a
=
75
°
C
25
°
C
25
°
C
0
1
3
Collector current I
C
(mA)
100
200
300
400
10
30
100
300
1
000
D
F
V
CE
=
10 V
T
a
=
75
°
C
25
°
C
25
°
C
0
0.1
0.3
Collector to base voltage V
CB
(V)
6
5
4
3
2
1
1
3
10
30
100
C
o
f
=
1 MHz
I
E
=
0
T
a
=
25
°
C
1
0.4
3
10
–30
100
300
1
000
3
000
–10
000
1.4
1.2
1.0
0.8
0.6
Input voltage V
IN
(V)
O
O
μ
A
V
O
=
5 V
T
a
=
25
°
C
0.1
0.3
0.1
0.3
1
3
10
30
100
300
1
000
1
3
10
30
100
I
I
Output current I
O
(mA)
V
O
=
0.2 V
T
a
=
25
°
C
相关PDF资料
PDF描述
UNR4216(UN4216) Composite Device - Transistors with built-in Resistor
UNR4214 Composite Device - Transistors with built-in Resistor
UN4214 Composite Device - Transistors with built-in Resistor
UNR4215 Composite Device - Transistors with built-in Resistor
UN4215 Composite Device - Transistors with built-in Resistor
相关代理商/技术参数
参数描述
UNR4121 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:UNR412x Series (UN412x Series) Silicon PNP epitaxial planar type
UNR4121(UN4121) 制造商:未知厂家 制造商全称:未知厂家 功能描述:複合デバイス - 抵抗内蔵型トランジスタ
UNR412100A 功能描述:TRANS PNP W/RES 40HFE NS-B1 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路﹐预偏压式 系列:- 标准包装:10,000 系列:- 晶体管类型:NPN - 预偏压 电流 - 集电极 (Ic)(最大):100mA 电压 - 集电极发射极击穿(最大):50V 电阻器 - 基极 (R1)(欧):47k 电阻器 - 发射极 (R2)(欧):47k 在某 Ic、Vce 时的最小直流电流增益 (hFE):70 @ 5mA,5V Ib、Ic条件下的Vce饱和度(最大):300mV @ 500µA,10mA 电流 - 集电极截止(最大):- 频率 - 转换:100MHz 功率 - 最大:250mW 安装类型:表面贴装 封装/外壳:SC-70,SOT-323 供应商设备封装:PG-SOT323-3 包装:带卷 (TR) 其它名称:SP000756242
UNR4122 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | 50V V(BR)CEO | 500MA I(C) | SPAK