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参数资料
| 型号： | W19B320ATT9G |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | PROM |
| 英文描述： | 2M X 16 FLASH 3V PROM, 70 ns, PDSO48 |
| 封装： | 12 X 20 MM, TSOP-48 |
| 文件页数： | 36/53页 |
| 文件大小： | 479K |
| 代理商： | W19B320ATT9G |
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W19B320AT/B
Publication Release Date: December 27, 2005
- 41 -
Revision A4
8.10 Alternate #CE Controlled Erase and Program Operations
70 NS
PARAMETER
SYM.
MIN.
TYPICAL
(NOTE3)
MAX.
(NOTE4)
UNIT
Write Cycle Time (Note 1)
TWC
70
-
ns
Address Setup Time
TAS
0
-
ns
Address Hold Time
TAH
45
-
ns
Data Setup Time
TDS
35
-
ns
Data Hold Time
TDH
0
-
ns
Read Recover Time Before Write (#OE High
to #WE Low)
TGHEL
0
-
ns
#WE Setup Time
TWS
0
-
ns
#WE Hold Time
TWH
0
-
ns
#CE Pulse Width
TCP
30
-
ns
#CE Pulse Width High
TCPH
30
-
ns
Byte
TPB
-
5
150
Programming Time (Note 6)
Word
TPW
-
7
210
μs
Byte
Accelerated Programming
Time (Note 6)
Word
TACCP
-
4
120
μs
Sector Erase Time (Note 2)
TSE
-
0.4
15
sec
Chip Erase Time (Note 2)
TCE
-
49
-
sec
Byte
TCPB
-
21
63
Chip Program Time (Note 5)
Word
TCPW
-
14
42
sec
Notes:
1. Not 100 % tested.
2. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
3. Typical program and erase time assume the following conditions :25℃,3.0 V VDD, 100,000 cycles .Additionally,
programming typicals assume checkerboard pattern.
4. Under worst case conditions of 90℃, VDD =2.7V, 100,000 cycles.
5. The typical chip programming time is considerably less than the maximun chip programming time listed,since most
bytes program faster than maximun program times listed.
6. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command.
7. The device has a minimum erase and program cycle endurance of 100,000 cycles.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W19B320B | 制造商:WINBOND 制造商全称:Winbond 功能描述:32Mbit, 2.7~3.6-volt single bank CMOS flash memory |
| W19B320BB | 制造商:WINBOND 制造商全称:Winbond 功能描述:32Mbit, 2.7~3.6-volt single bank CMOS flash memory |
| W19B320BB-H | 制造商:WINBOND 制造商全称:Winbond 功能描述:2.7~3.6-volt write (program and erase) operations |
| W19B320BB-M | 制造商:WINBOND 制造商全称:Winbond 功能描述:2.7~3.6-volt write (program and erase) operations |
| W19B320BT | 制造商:WINBOND 制造商全称:Winbond 功能描述:32Mbit, 2.7~3.6-volt single bank CMOS flash memory |
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