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参数资料
| 型号： | 026BI01L |
| 英文描述： | LOW SKEW, 1-TO-2 DIFFERENTIAL-TO-LVCMOS/LVTTL FANOUT BUFFER |
| 中文描述： | 低偏移，1至2 DIFFERENTIAL-TO-LVCMOS/LVTTL扇出缓冲器 |
| 文件页数： | 8/14页 |
| 文件大小： | 240K |
| 代理商： | 026BI01L |
83026BMI-01
www.icst.com/products/hiperclocks.html
REV. A JANUARY 16, 2006
3
Integrated
Circuit
Systems, Inc.
ICS83026I-01
LOW SKEW, 1-TO-2
DIFFERENTIAL-TO-LVCMOS/LVTTL FANOUT BUFFER
TABLE 3A. POWER SUPPLY DC CHARACTERISTICS, V
DD = 3.3V ± 5%, VDDO = 1.71V
TO
3.465V, TA = -40°C TO 85°C
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3A
m
TABLE 3B. LVCMOS / LVTTL DC CHARACTERISTICS, V
DD = 3.3V ± 5%, VDDO = 2.375V
TO
3.465V, TA = -40°C TO 85°C
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5
3
1
.
3
=6
.
2V
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V
5
7
3
.
2
=8
.
1V
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"
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, V
DD
4.6V
Inputs, V
I
-0.5V to V
DD + 0.5 V
Outputs, V
O
-0.5V to V
DDO + 0.5V
Package Thermal Impedance,
θ
JA
8 Lead SOIC
112.7°C/W (0 lfpm)
8 Lead TSSOP
101.7°C/W (0 lfpm)
Storage Temperature, T
STG
-65°C to 150°C
NOTE: Stresses beyond those listed under Absolute
Maximum Ratings may cause permanent damage to the
device.These ratings are stress specifications only. Functional
operation of product at these conditions or any conditions be-
yond those listed in the DC Characteristics or AC Character-
istics is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect product reliability.
TABLE 3C. LVCMOS / LVTTL DC CHARACTERISTICS, V
DD = 3.3V ± 5%, VDDO = 1.8V ± 5%, T
A
= -40°C TO 85°C
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D
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D
V
=
N
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5
6
4
.
3
=5
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5
1
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1
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0
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2
-
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.
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=5
4
.
0V
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