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参数资料
| 型号： | 0405SC-1500M |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, SiC, N-CHANNEL, RF POWER, MOSFET |
| 封装： | CASE 55ST, 2 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 222K |
| 代理商： | 0405SC-1500M |
0405SC-1500M Rev B
Microsemi RFIS SC. reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi..com or contact our factory direct.
PRELIMINARY SPECIFICATION
GENERAL DESCRIPTION
The 0405SC-1500M is a Common Gate N-Channel DEPLETION MODE
Class
AB
SILICON
CARBIDE
(SiC)
STATIC
INDUCTION
TRANSISTOR (SIT) capable of providing 1500 Watts of RF power from 406
to 450 MHz. The transistor is designed for use in High Power Amplifiers
supporting applications such as UHF Weather Radar and Long Range Tracking
Radar. The device is an addition to a series of High Power Silicon Carbide
Transistors from Microsemi PPG.
CASE OUTLINE
55ST FET
(Common Gate)
ABSOLUTE MAXIMUM RATINGS
Voltage and Current
Drain-Source (VDSS)
250V
Gate-Source (VGS)
-1V
Temperatures
Storage Temperature
-65 to +150
°C
Operating Junction Temperature
+250
°C
ELECTRICAL CHARACTERISTICS @ 25
°C
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Idss
Drain-Source Leakage Current
VGS = -20V, VDG= 125V
750
A
Igss
Gate-Source Leakage Current
VGS = -20V, VDS = 0V
50
A
θJC
1
Thermal Resistance
0.15
C/W
FUNCTIONAL CHARACTERISTICS @ 25
°C, Vdd = 125V, I
dq(ave) = 125 mA, Freq = 406, 425, 450 MHz,
GPG
Common Gate Power Gain
Pout = 1500 W, Pulsed
7.5
8.0
dB
Pin
Input Power
Pulse Width = 300us, DF = 6%
250
270
W
ηd
Drain Efficiency
F = 450 MHz, Pout =1500W
50
55
%
ψ
Load Mismatch
F = 420 MHz, Pout = 1500W
5:1
Po +1dB
Power Output – Higher Drive
F = 450 MHz, Pin = 255 W
1600
W
Vgs
Gate source Voltage
Set for Idq(ave) = 125mA
3.0
10.0
Volts
Note 1: Thermal Resistance rating is with operating conditions as a Pulsed RF transistor as listed under the Functional Characteristics
Note 2: Product Available May 2010
Rev B – Mar 2010
0405SC-1500M
1500Watts, 125 Volts, Class AB
406 to 450 MHz
Silicon Carbide SIT
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