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参数资料
| 型号： | 0510-50A |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | 55AV, 4 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 287K |
| 代理商： | 0510-50A |
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
0510-50A
50 Watts, 28 Volts, Class AB
Defcom 500 - 1000
MHz
GENERAL DESCRIPTION
The 0510-50A is a double input matched COMMON EMITTER broadband
transistor specifically intended for use in the 500-1000 MHz frequency band.
It may be operated in Class AB or C. Gold metallization and silicon diffused
resistors ensure improved ruggedness and high reliability.
CASE OUTLINE
55AV - Style 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C
125 Watts
o
Maximum Voltage and Current
BVces
Collector to Emiter Voltage
60 Volts
BVebo
Emitter to Base Voltage
4.0 Volts
Ic
Collector Current
3.7 A
Maximum Temperatures
Storage Temperature
- 65 to +200 C
o
Operating Junction Temperature
+200 C
o
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Pg
ηc
VSWR
Power Output
Power Input
Power Gain
Efficiency
Load Mismatch Tolerance
F = 1000 MHz
Vcc = 28 Volts
Vcb = 28V, Po = 50W
50
7.0
50
12.5
5:1
Watts
dB
%
BVebo
BVces
BVceo
Cob
h
FE
θjc
Emitter to Base Breakdown
Collector to Emitter Breakdown
Output Capacitance
DC - Current Gain
Thermal Resistance
Ie = 5 mA
Ic = 100 mA
Ie = 50 mA
Vcb = 28 V, F = 1 MHz
Vce = 5 V, Ic = 500 mA
4.0
60
27
10
27
1.4
Volts
pF
C/W
o
Issue August 1996
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