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参数资料
| 型号： | 0910-150M |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | 功率晶体管 |
| 英文描述： | P-Band 890-1000 MHz; P(out) (W): 150; P(in) (W): 18; Gain (dB): 9.2; Vcc (V): 36; Pulse Width (µsec): 150; Duty Cycle (%): 2; Case Style: 55KT-1 |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | HERMETIC SEALED, CASE 55KT, 2 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 108K |
| 代理商： | 0910-150M |
0910-150M
ADVANCED POWER TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT
VERSION PLEASE CHECK OUR WEB SITE
AT WWW. ADVANCEDPOWER.COM OR CONTACT OUR FACTORY DIRECT.
Advanced Power Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 /869-2324
Performance Curves –
Pin v s. Pout
0
30
60
90
120
150
180
210
240
270
36
37
38
39
40
41
42
43
44
45
46
Pin (dBm)
P
out
(
W
)
890 MHz
937 MHz
1000 MHz
Pin v s. Gain
0
1
2
3
4
5
6
7
8
9
10
11
12
37
38
39
40
41
42
43
44
45
46
Pin (dBm)
G
ai
n
(
d
B
)
890 MHz
937 MHz
1000 MHz
Pin v s. Efficie ncy
0.00
10.00
20.00
30.00
40.00
50.00
60.00
70.00
37
38
39
40
41
42
43
44
45
46
Pin (dBm)
E
ff
ici
enc
y
(
%
)
890 MHz
937 MHz
1000 MHz
Impedance Information
Output
Matching
Circuit
Input
Matching
Circuit
50 Ohms
ZSource
ZLoad
Frequencies (MHz)
)
(
Source
Z
)
(
Load
Z
2
890
4.0 - j4.2
1.85 – j3.2
937
4.0 - j3.5
1.97 – j3.0
1000
4.1 - j2.5
2.1 – j3.0
Note 2:
Load
Z
exclusive of C1 and C4 on the test circuit
0910– 150M
相关PDF资料 |
PDF描述 |
|---|---|
| 0910-300M | P-Band 890-1000 MHz; P(out) (W): 300; P(in) (W): 33; Gain (dB): 9.6; Vcc (V): 50; Pulse Width (µsec): 150; Duty Cycle (%): 2; Case Style: 55KT-1 |
| 0910-300M | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 0910-60M | P-Band 890-1000 MHz; P(out) (W): 60; P(in) (W): 9.5; Gain (dB): 8; Vcc (V): 40; Pulse Width (µsec): 150; Duty Cycle (%): 5; Case Style: 55AW-1 |
| 0912-25 | TRANSISTOR | BJT | NPN | 2.5A I(C) | FO-67VAR |
| 0912-45 | TRANSISTOR | BJT | NPN | 4.5A I(C) | FO-67VAR |
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